TH50VSF3582AASB TOSHIBA [Toshiba Semiconductor], TH50VSF3582AASB Datasheet - Page 28
TH50VSF3582AASB
Manufacturer Part Number
TH50VSF3582AASB
Description
TOSHIBA MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS
Manufacturer
TOSHIBA [Toshiba Semiconductor]
Datasheet
1.TH50VSF3582AASB.pdf
(50 pages)
- Current page: 28 of 50
- Download datasheet (539Kb)
ADDRESS A6~A0
2CH
2DH
2EH
4AH
4BH
4CH
4DH
4EH
2FH
30H
31H
32H
33H
34H
40H
41H
42H
43H
44H
45H
46H
47H
48H
49H
4FH
50H
DATA DQ15~DQ0
003EH
000XH
0002H
0007H
0000H
0020H
0000H
0000H
0000H
0001H
0050H
0052H
0049H
0031H
0031H
0000H
0002H
0001H
0001H
0004H
0001H
0000H
0000H
0085H
0095H
0001H
Number of Erase Block Region within device
Erase Block Region 1 Information
Erase Block Region 2 Information
Query Unique ASCII string “PRI”
Major version number, ASCII
Minor version number, ASCII
Address Sensitive Unlock
Erase Suspend
Block Protect
Block Temporary Unprotect
Block Protect/Unprotect scheme
Simultaneous Operation
Burst Mode
Page Mode
V
V
Top/Bottom Boot Block Flag
Program Suspend
ACC
ACC
0~15 bit: y = Block Number
16~31 bit: z = Block Size
(z × 256 byte)
0: Required
1: Not Required
0: Not Supported
1: To Read Only
2: To Read & Write
0: Not Supported
X: Number of blocks in per group
0: Not Supported
1: Supported
0: Not Supported
1: Supported
0: Not Supported
0: Not Supported
DQ7~DQ4: 1 V
DQ3~DQ0: 100 mV
DQ7~DQ4: 1 V
DQ3~DQ0: 100 mV
2: TH50VSF3582AASB
3: TH50VSF3583AASB
0: Not Supported
1: Supported
Min voltage
Max voltage
TH50VSF3582/3583AASB
DESCRIPTION
2001-06-08 28/50
Related parts for TH50VSF3582AASB
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
TOSHIBA Bipolar Digital Integrated Circuit Silicon Monolithic
Manufacturer:
TOSHIBA [Toshiba Semiconductor]
Datasheet:
Part Number:
Description:
TOSHIBA Bi-CMOS Digital Integrated Circuit Silicon Monolithic
Manufacturer:
TOSHIBA [Toshiba Semiconductor]
Datasheet:
Part Number:
Description:
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (MOSV)
Manufacturer:
TOSHIBA [Toshiba Semiconductor]
Datasheet:
Part Number:
Description:
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type
Manufacturer:
TOSHIBA [Toshiba Semiconductor]
Datasheet:
Part Number:
Description:
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U−MOSIII)
Manufacturer:
TOSHIBA [Toshiba Semiconductor]
Datasheet:
Part Number:
Description:
Toshiba Semiconductor [TOSHIBA IGBT Module Silicon N Channel IGBT]
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
Toshiba Semiconductor [SILICON N CHANNEL 1GBT]
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
Toshiba Semiconductor [GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications]
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
Toshiba Semiconductor [Power Module]
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA GTR Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA Intelligent Power Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA INTELLIGENT POWER MODULE SILICON N CHANNEL LGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA IGBT Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA GTR MODULE SILICON N−CHANNEL IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet: