M72DW64000B90ZT STMICROELECTRONICS [STMicroelectronics], M72DW64000B90ZT Datasheet

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M72DW64000B90ZT

Manufacturer Part Number
M72DW64000B90ZT
Description
64Mbit (x8/ x16, Multiple Bank, Boot Block) Flash Memory and 16Mbit Pseudo SRAM, 3V Supply, Multiple Memory Product
Manufacturer
STMICROELECTRONICS [STMicroelectronics]
Datasheet
FEATURES SUMMARY
– 64Mbit (8M x8 or 4M x16), Multiple Bank, Page,
– 16Mbit (1M x 16) Pseudo Static RAM
FLASH MEMORY
– Page Width: 4 Words
– Page Access: 25, 30ns
October 2003
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
MULTIPLE MEMORY PRODUCT
Boot Block, Flash Memory
SUPPLY VOLTAGE
– V
– V
ACCESS TIME: 70, 90ns
LOW POWER CONSUMPTION
ELECTRONIC SIGNATURE
– Manufacturer Code: 0020h
– Device Code: 227Eh + 2202h + 2201h
ASYNCHRONOUS PAGE READ MODE
PROGRAMMING TIME
– 10µs per Byte/Word typical
– 4 Words/ 8 Bytes at-a-time Program
MEMORY BLOCKS
– Quadruple Bank Memory Array:
– Parameter Blocks (at both Top and Bottom)
DUAL OPERATIONS
– While Program or Erase in a group of banks
PROGRAM/ERASE SUSPEND and RESUME
MODES
– Read from any Block during Program
– Read and Program another Block during
UNLOCK BYPASS PROGRAM COMMAND
– Faster Production/Batch Programming
64Mbit (x8/ x16, Multiple Bank, Boot Block) Flash Memory and
8Mbits + 24Mbits + 24Mbits + 8Mbits
(from 1 to 3), Read in any of the other banks
Suspend
Erase Suspend
CCF
PPF
16Mbit Pseudo SRAM, 3V Supply, Multiple Memory Product
= 12V for Fast Program (optional)
= V
CCP
= 2.7 to 3.3V
Figure 1. Package
PSRAM
V
PROTECT
TEMPORARY BLOCK UNPROTECTION
MODE
COMMON FLASH INTERFACE
– 64 bit Security Code
EXTENDED MEMORY BLOCK
– Extra block used as security block or to store
100,000 PROGRAM/ERASE CYCLES per
BLOCK
ACCESS TIME: 70ns
DEEP POWER DOWN CURRENT: 10µA
LOW V
LOW STANDBY CURRENT: 70µA
PP
additional information
/WP PIN for FAST PROGRAM and WRITE
CC
DATA RETENTION: 2.3V
M72DW64000B
LFBGA73 (ZA)
8 x 11.6mm
FBGA
PRELIMINARY DATA
1/19

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M72DW64000B90ZT Summary of contents

Page 1

Multiple Bank, Boot Block) Flash Memory and 16Mbit Pseudo SRAM, 3V Supply, Multiple Memory Product FEATURES SUMMARY MULTIPLE MEMORY PRODUCT – 64Mbit ( x16), Multiple Bank, Page, Boot Block, Flash Memory – 16Mbit (1M ...

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M72DW64000B TABLE OF CONTENTS SUMMARY DESCRIPTION . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

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PACKAGE MECHANICAL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

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... Mbit Multiple Bank, Boot Block Flash memory (M29DW640D) and a 16 Mbit Pseudo SRAM. This document should be read in conjunc- tion with the M29DW640D and M69AW024B datasheets. Recommended operating conditions do not allow more than one of the internal memory devices to be active at the same time. ...

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Figure 3. LFBGA Connections (Top view through package DQ0 K DQ8 ...

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M72DW64000B SIGNAL DESCRIPTION See Figure 2 Logic Diagram and Table 1,Signal Names, for a brief overview of the signals connect this device. Address Inputs (A0-A21). Address lines A0-A19 are common inputs for the Flash Memory and PSRAM components. ...

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RHEL M29DW640D datasheet for more details. Holding will temporarily unprotect the F ID protected Blocks in the memory. Program and Erase operations on all blocks will be possible. The transition from V to ...

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M72DW64000B FUNCTIONAL DESCRIPTION The Flash Memory and PSRAM components have a common power supply. The components are dis- tinguished by four chip enable inputs: E Flash memory, and E1 and E2 P Recommended operating conditions do not allow more than ...

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Figure 4. Functional Block Diagram A20-A21 RP BYTE A0-A19 /WP CCF PPF Mbit Flash Memory DDP P 16 Mbit PSRAM M72DW64000B ...

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M72DW64000B FLASH MEMORY DEVICES The M72DW64000B contains a 64Mbit Flash memory. For detailed information on how to use it, see the M29DW640D datasheet, which is avail- PSRAM DEVICE The M72DW64000B contains a 16Mbit Pseudo SRAM. For detailed information on how ...

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MAXIMUM RATING Stressing the device above the rating listed in the Absolute Maximum Ratings table may cause per- manent damage to the device. These are stress ratings only and operation of the device at these or any other conditions above ...

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M72DW64000B DC AND AC PARAMETERS This section summarizes the operating and mea- surement conditions, and the DC and AC charac- teristics of the device. The parameters in the DC and AC characteristics Tables that follow, are de- rived from tests ...

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Table 6. Flash DC Characteristics Symbol Parameter I Input Leakage Current LI I Output Leakage Current LO (2) Supply Current (Read) I CC1 I Supply Current (Standby) CC2 Supply Current (Program/ (1,2) I CC3 Erase) V Input Low Voltage IL ...

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M72DW64000B Table 7. PSRAM DC Characteristics Symbol Parameter Operating Supply (1) I DD1 Current Input Leakage I LI Current Output Leakage I LO Current Deep Power Down I PD Current Standby Supply I SB Current CMOS (2) Input High Voltage ...

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PACKAGE MECHANICAL Figure 7. Stacked LFBGA73 8x11.6mm, 10x12 array, 0.8mm pitch, Bottom View Package Outline BALL "A1" A Note: Drawing is not to scale M72DW64000B ddd BGA-Z50 15/19 ...

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M72DW64000B Table 8. Stacked LFBGA73 8x11.6mm, 10x12 array, 0.8mm pitch, Package Mechanical Data Symbol Typ 0.910 b 0.400 D 8.000 D1 7.200 ddd E 11.600 E1 8.800 e 0.800 FD 0.400 FE 1.400 SD 0.400 SE 0.400 ...

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PART NUMBERING Table 9. Ordering Information Scheme Example: Device Type M72 = MMP (Flash + PSRAM) Architecture D = Dual Operation Operating Voltage 2.7V to 3.3V CCF CCP Flash Memory Device Size (Die1 Density) ...

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M72DW64000B REVISION HISTORY Table 10. Document Revision History Date Version 26-May-2003 1.0 First Issue 24-Sep-2003 1.1 Voltage supply range extended 2.7V working at all speed options 18/19 Revision Details ...

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Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. ...

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