AM49DL640BH56IS SPANSION [SPANSION], AM49DL640BH56IS Datasheet - Page 54
AM49DL640BH56IS
Manufacturer Part Number
AM49DL640BH56IS
Description
64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
Manufacturer
SPANSION [SPANSION]
Datasheet
1.AM49DL640BH56IS.pdf
(63 pages)
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pSRAM AC CHARACTERISTICS
Read Cycle
Notes:
1. t
2. If CE#, LB#, or UB# goes low at the same time or before
52
Parameter
Symbol
the outputs achieve the open circuit condition and are not
referenced to output voltage levels.
WE# goes high, the outputs will remain at high impedance.
OD,
t
t
t
t
t
t
t
t
COE
t
ODO
t
t
ACC
t
OEE
t
t
t
t
AOH
CO
OD
OH
PM
RC
OE
BA
BE
BD
PC
AA
Addresses
A0 to A20
I/O1 to 16
LB#, UB#
t
ODo
CE#1
D
WE#
OE#
CE2
, t
OUT
BD
Description
Read Cycle Time
Address Access Time
Chip Enable Access Time
Output Enable Access Time
Data Byte Control Access Time
Chip Enable Low to Output Active
Output Enable Low to Output Active
Data Byte Control Low to Output Active
Chip Enable High to Output High-Z
Output Enable High to Output High-Z
Data Byte Control High to Output High-Z
Output Data Hold from Address Change
Page Mode Time
Page Mode Cycle Time
Page Mode Address Access Time
Page Output Data Hold Time
, and t
ODW
are defined as the time at which
High-Z
A D V A N C E
Figure 28. Psuedo SRAM Read Cycle
t
ACC
t
COE
t
CO
t
OEE
t
Am49DL640BH
t
BE
OE
t
BA
I N F O R M A T I O N
Indeterminate
3. If CE#, LB#, or UB# goes low at the same time or after WE#
t
RC
Max
Max
Max
Max
Max
Max
Max
Max
Min
Min
Min
Min
Min
Min
Min
Min
goes low, the outputs will remain at high impedance.
56
Valid Data Out
70
70
70
Speed
70
25
25
10
20
20
20
10
70
30
30
10
0
0
t
BD
t
ODO
t
OD
t
OH
December 5, 2003
85
85
85
85
Fixed High
Unit
High-Z
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
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