THNCF008MAA TOSHIBA [Toshiba Semiconductor], THNCF008MAA Datasheet - Page 42

• Manufacturer Part Number: THNCF008MAA
• Description: CompactFlash Card
• Manufacturer: TOSHIBA [Toshiba Semiconductor]

DC Characteristics
DC Characteristics
DC Characteristics
DC Characteristics- - - - 1 (Ta=0 to +70°C, V
Paramet
Paramet
Paramet
Parameter er er er
Input voltage
Schmitt circuit
Output voltage (4mA)
Input leakage current
Output leakage current
Pull-up current (Resistivity)
Pull-down current (Resistivity) －I
Sleep/standby current
Sector read current
Sector write current
XIN
Tclkl
Tclkh
Symbol
Symbol
Symbol
Symbol
T
clkl
clock LOW time
clock HIGH time
1 (Ta=0 to +70°C, V
1 (Ta=0 to +70°C, V
1 (Ta=0 to +70°C, V
Symbol
Symbol
V
V
V
V
V
V
I
I
－I
I
I
I
I
I
Symbol
Symbol
LI
LO
SP1
CCR
CCR
CCW
CCW
IH
IL
T+
T-
OH
OL
PU
PD
(DC)
(Peak)
(DC)
(Peak)
Parameter
Parameter
Parameter
Parameter
-20/(1800) -48/(206) -72/(85) μA(kΩ) V
20/(165)
T
-0.3
clkh
Min
Min
Min
Min
2.0
2.4
－
－
－
－
－
－
－
－
－
－
45/(73) 72/(45) μA(kΩ) V
(0.2)
Typ
Typ
Typ
Typ
(25)
(50)
(25)
(50)
2.1
1.2
－
－
－
－
－
－
CC
CC
CC
CC
= 3.3V±5%, 5V±10%)
= 3.3V±5%, 5V±10%)
= 3.3V±5%, 5V±10%)
= 3.3V±5%, 5V±10%)
V
CC
(0.5)
Max
Max
Max
Max
(50)
(80)
(50)
(80)
0.6
0.4
－
－
－
1
1
+0.3
Min
Min
Min
Min
20
20
Unit
Unit
Unit
Unit
μA
μA
MA
MA
MA
MA
MA
V
V
V
V
V
V
THNCFxxxMAA Series
Preliminary version
Test conditions
Test conditions
Test conditions
Test conditions
－
V
I
I
－
V
CMOS level
(control signal=V
CMOS level
(control signal=V
CMOS level
(control signal=V
OH
OL
CC
OUT
Force
Force
=4mA
=-4mA
=3.3V
=high impedance
=3.3V
=0V
Max
Max
Max
Max
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CC
CC
CC
-0.2)
-0.2)
-0.2)