KFM2G16Q2M-DEB5 SAMSUNG [Samsung semiconductor], KFM2G16Q2M-DEB5 Datasheet - Page 100

• Manufacturer Part Number: KFM2G16Q2M-DEB5
• Description: MuxOneNAND FLASH MEMORY
• Manufacturer: SAMSUNG [Samsung semiconductor]

Note 1. CE should be VIH for RDY. IOBE should be ’0’ for INT.
Note 2. Icc active for Host access
Note 3. ICC active for Internal operation. (without host access)
Note 4. Vccq is equivalent to Vcc-IO
(Note 2)
MuxOneNAND1G(KFM1G16Q2M-DEB5)
MuxOneNAND2G(KFN2G16Q2M-DEB5)
4.3
Input Leakage Current
Output Leakage Current
Active Asynchronous Read Current
Active Burst Read Current (Note 2)
Active Write Current (Note 2)
Active Load Current (Note 3)
Active Program Current (Note 3)
Active Erase Current (Note 3)
Multi Block Erase Current (Note 3)
Standby Current
Input Low Voltage
Input High Voltage (Note 4)
Output Low Voltage
Output High Voltage
Parameter
DC Characteristics
Symbol
I
I
I
I
I
I
I
V
V
V
I
CC1
CC2
CC3
CC4
CC5
CC6
CC7
I
V
I
LO
SB
OH
LI
OL
IH
IL
V
V
CE=V
CE=V
CE=V
CE=V
CE=V
CE=V
CE=V
CE= RP=V
-
-
I
I
CE or OE=V
OL
OH
IN
OUT
=V
= 100 µA ,V
= -100 µA , V
=V
IL
IL
IL
IL
IL
IL
IL
SS
, OE=V
, OE=V
, OE=V
, OE=V
, OE=V
, OE=V
, OE=V
SS
to V
to V
CC
CC
IH
Test Conditions
± 0.2V
CC
(Note 1)
IH
IH
IH
IH
IH
IH
IH
, V
CC
, WE=V
, WE=V
, WE=V
, WE=V
100
CC
, V
=V
CC
=V
CC
=V
CCmin
CCmin
=V
CCmax
IH
IH
IH
IH
CCmax
, 64blocks
, V
, V
CCq
,
CCq
=V
=V
CCqmin
54MHz
54MHz
(DDP)
(DDP)
1MHz
1MHz
Single
Single
Single
Single
DDP
DDP
DDP
DDP
CCqmin
V
V
CCq
CCq
- 1.0
- 2.0
- 1.0
- 2.0
Min
-0.5
FLASH MEMORY
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-0.4
-0.1
KFM1G16Q2M
Typ
12
17
13
30
25
20
20
10
20
8
3
3
8
-
-
-
-
-
-
-
V
CCq
+ 1.0
+ 2.0
+ 1.0
+ 2.0
Max
100
0.4
0.2
25
15
20
22
15
20
40
30
25
50
4
4
-
+0.4
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
µA
µA
µA
V
V
V
V