KFM2G16Q2M-DEB5 SAMSUNG [Samsung semiconductor], KFM2G16Q2M-DEB5 Datasheet - Page 45
![no-image](/images/no-image-200.jpg)
KFM2G16Q2M-DEB5
Manufacturer Part Number
KFM2G16Q2M-DEB5
Description
MuxOneNAND FLASH MEMORY
Manufacturer
SAMSUNG [Samsung semiconductor]
Datasheet
1.KFM2G16Q2M-DEB5.pdf
(124 pages)
- Current page: 45 of 124
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MuxOneNAND1G(KFM1G16Q2M-DEB5)
MuxOneNAND2G(KFN2G16Q2M-DEB5)
2.8.12 Start Address4 Register F103h (R/W)
2.8.11 Start Address3 Register F102h (R/W)
This Read/Write register describes the NAND Flash destination block address which will be copy back programmed.
F102h, default = 0000h
Start Address3 Information
This Read/Write register describes the NAND Flash destination page address in a block and the NAND Flash destination sector
address in a page for copy back programming.
F103h, default = 0000h
Start Address4 Information
15
15
Register Information
14
14
FCSA
FCPA
Item
FCBA
Reserved(000000)
Device
13
1Gb
13
Reserved(00000000)
12
12
NAND Flash Copy Back Sector
NAND Flash Copy Back Page
11
11
Description
10
Address
Address
10
9
9
Number of Block
8
1024
8
NAND Flash Copy Back Block Address
45
7
7
Default Value
6
Description
000000
6
00
5
FCBA
5
FCPA
4
4
FLASH MEMORY
3
3
FCBA[9:0]
6 bits for 64 pages
2 bits for 4 sectors
000000 ~ 111111,
FBA
2
2
00 ~ 11,
Range
1
1
FCSA
0
0
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