KFM2G16Q2M-DEB5 SAMSUNG [Samsung semiconductor], KFM2G16Q2M-DEB5 Datasheet - Page 61
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KFM2G16Q2M-DEB5
Manufacturer Part Number
KFM2G16Q2M-DEB5
Description
MuxOneNAND FLASH MEMORY
Manufacturer
SAMSUNG [Samsung semiconductor]
Datasheet
1.KFM2G16Q2M-DEB5.pdf
(124 pages)
- Current page: 61 of 124
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MuxOneNAND1G(KFM1G16Q2M-DEB5)
MuxOneNAND2G(KFN2G16Q2M-DEB5)
2.8.33 ECC Result of 4
This Read register shows the Error Correction result for the 4th selected sector of the main area data. ECCposWord3 is the error
position address in the Main Area data of 256 words. ECCposIO3 is the error position address which selects 1 of 16 DQs.
ECCposWord3 and ECCposIO3 are also updated at boot loading.
FF07h, default = 0000h
2.8.34 ECC Result of 4
This Read register shows the Error Correction result for the 4th selected sector of the spare area data. ECClogSector3 is the error
position address for 1.5 words of 2nd and 3rd words in the spare area. ECCposIO3 is the error position address which selects 1 of 16
DQs. ECClogSector3 and ECCposIO3 are also updated at boot loading.
FF08h, default = 0000h
ECC Log Sector
ECClogSector0~ECClogSector3 indicates the error position in the 2nd word and LSB of 3rd word in the spare area.
Refer to note 2 in chapter 2.7.2
ECClogSector Information [5:4]
15
15
Reserved(0000)
14
14
ECClogSector
Register FF07h (R)
Register FF08h (R)
13
10, 11
13
00
01
12
Reserved(0000000000)
12
11
11
10
th
th
10
Selected Sector, Main Area Data
Selected Sector, Spare Area Data
9
9
8
ECCposWord3
8
7
61
7
6
6
ECClogSector3
Error Position
5
Reserved
2nd word
3rd word
5
4
4
FLASH MEMORY
3
3
ECCposIO3
ECCposIO3
2
2
1
1
0
0
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