NP74N04YUG RENESAS [Renesas Technology Corp], NP74N04YUG Datasheet - Page 2

• Manufacturer Part Number: NP74N04YUG
• Description: MOS FIELD EFFECT TRANSISTOR
• Manufacturer: RENESAS [Renesas Technology Corp]

NP74N04YUG
Electrical Characteristics (T
Note:
TEST CIRCUIT 1 AVALANCHE CAPABILITY
TEST CIRCUIT 3 GATE CHARGE
R07DS0017EJ0100 Rev.1.00
Jul 01, 2010
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate to Source Threshold Voltage
Forward Transfer Admittance
Drain to Source On-state
Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V
GS
= 20
∗
PG.
1. Pulsed
→
0 V
PG.
I
∗ 1
G
= 2 mA
V
Item
50
R
DD
G
Ω
D.U.T.
= 25
I
D
50
I
Ω
AS
Ω
D.U.T.
BV
∗ 1
∗ 1
DSS
Starting T
R
V
DD
L
V
DS
C
C
t
t
t
Q
I
I
V
| y
R
C
t
Q
Q
Q
V
t
Symbol
DSS
GSS
d(on)
r
d(off)
f
rr
L
V
A
GS(th)
F(S-D)
DS(on)
iss
oss
rss
G
GS
GD
rr
DD
fs
ch
= 25°C)
|
V
0
Min
2.0
21
GS
τ
Duty Cycle
= 1 s
TEST CIRCUIT 2 SWITCHING TIME
PG.
μ
τ
3620
0.94
≤
Typ
330
220
3.0
4.2
42
26
10
62
64
17
21
38
44
6
1%
R
G
D.U.T.
±100
5430
Max
500
400
124
4.0
5.5
1.5
52
25
15
96
1
R
V
DD
L
Unit
mΩ
μ
nA
nC
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
V
S
V
V
Wave Form
V
Wave Form
A
GS
DS
V
V
V
V
V
V
V
V
V
f = 1 MHz
V
V
R
V
V
I
I
I
di/dt = 100 A/
V
GS
DS
D
F
F
0
DS
0
DS
GS
DS
DS
GS
DS
GS
DD
GS
DD
GS
G
= 75 A, V
= 75 A, V
= 75 A
10%
t
d(on)
= 0 Ω
90%
Test Conditions
= 40 V, V
= V
= 5 V, I
= 25 V,
= ±20 V, V
= 10 V, I
= 0 V,
= 20 V, I
= 10 V,
= 32 V,
= 10 V,
t
on
GS
10% 10%
t
, I
r
Chapter Title
D
GS
GS
D
V
D
D
t
= 37.5 A
GS
= 250
μ
d(off)
GS
Page 2 of 6
= 0 V
= 0 V,
= 37.5 A
= 37.5 A,
DS
s
= 0 V
t
= 0 V
off
90%
μ
90%
t
f
A