NP74N04YUG RENESAS [Renesas Technology Corp], NP74N04YUG Datasheet - Page 3

• Manufacturer Part Number: NP74N04YUG
• Description: MOS FIELD EFFECT TRANSISTOR
• Manufacturer: RENESAS [Renesas Technology Corp]

NP74N04YUG
Typical Characteristics (T
R07DS0017EJ0100 Rev.1.00
Jul 01, 2010
1000
100
100
80
60
40
20
0.1
10
0
DERATING FACTOR OF FORWARD BIAS SAFE
OPERATING AREA
1
0.1
0
FORWARD BIAS SAFE OPERATING AREA
T
Single Pulse
C
= 25°C
Power Dissipation Limited
25
V
T
DS
C
- Case Temperature - °C
- Drain to Source Voltage - V
50
1000
0.01
100
0.1
1
10
1
100
75
I
D(pulse)
Single pulse
Mounted on glass epoxy substrate of 40 mm x 40 mm x 0.8 mmt
μ
100
A
= 25°C)
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
10
1 m
125
150
10 m
175
100
PW - Pulse Width - s
100 m
1
140
120
100
80
60
40
20
0
0
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
25
10
T
C
R
R
- Case Temperature - °C
50
th(ch-A)
th(ch-C)
100
: 150°C/W
: 1.25°C/W
75
100
1000
125
Chapter Title
150
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