NP74N04YUG RENESAS [Renesas Technology Corp], NP74N04YUG Datasheet - Page 5

• Manufacturer Part Number: NP74N04YUG
• Description: MOS FIELD EFFECT TRANSISTOR
• Manufacturer: RENESAS [Renesas Technology Corp]

NP74N04YUG
R07DS0017EJ0100 Rev.1.00
Jul 01, 2010
1000
1000
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
15
10
100
100
0.1
5
0
10
10
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
-100
1
1
0.1
0
V
I
Pulsed
D
GS
= 37.5 A
V
= 10 V
SWITCHING CHARACTERISTICS
F(S-D)
V
T
GS
ch
= 10 V
- Source to Drain Voltage - V
- Channel Temperature - °C
I
D
0
0.5
1
- Drain Current - A
0 V
100
10
1
t
t
t
t
d(off)
d(on)
r
f
V
V
R
DD
GS
G
= 0 Ω
= 20 V
= 10 V
Pulsed
200
100
1.5
10000
40
35
30
25
20
15
10
1000
100
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
5
0
100
10
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10
1
0
0.1
0.1
V
f = 1MHz
GS
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
= 0V
V
DS
Q
20
G
- Drain to Source Voltage - V
V
- Gate Charge - nC
I
F
DD
1
- Drain Current - A
1
= 32 V
20 V
8 V
V
DS
40
di/dt = 100 A/μs
V
10
GS
10
= 0 V
I
D
60
= 75 A
Chapter Title
V
GS
Page 5 of 6
C
C
C
iss
oss
rss
100
100
12
10
8
6
4
2
0