NP74N04YUG RENESAS [Renesas Technology Corp], NP74N04YUG Datasheet - Page 4

• Manufacturer Part Number: NP74N04YUG
• Description: MOS FIELD EFFECT TRANSISTOR
• Manufacturer: RENESAS [Renesas Technology Corp]

NP74N04YUG
R07DS0017EJ0100 Rev.1.00
Jul 01, 2010
250
200
150
100
3.5
2.5
1.5
0.5
15
10
50
5
0
4
3
2
1
0
0
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
-100
0.1
GATE TO SOURCE THRESHOLD VOLTAGE
vs. CHANNEL TEMPERATURE
0
V
Pulsed
GS
= 10 V
T
V
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
ch
DS
- Channel Temperature - °C
1
- Drain to Source Voltage - V
I
D
0.5
0
- Drain Current - A
10
100
1
100
V
I
D
V
Pulsed
DS
= 250 μA
GS
= V
= 10 V
GS
1000
200
1.5
0.001
100
0.01
10
15
10
100
FORWARD TRANSFER ADMITTANCE vs. DRAIN
CURRENT
0.1
5
0
1
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
10
0.1
1
0
FORWARD TRANSFER CHARACTERISTICS
1
V
V
T
GS
GS
A
2
- Gate to Source Voltage - V
= −55°C
1
5
T
- Gate to Source Voltage - V
A
125°C
175°C
I
D
25°C
75°C
= −55°C
- Drain Current - A
I
D
25°C
75°C
= 75 A
37.5 A
3
15 A
10
10
4
125°C
175°C
100
15
Chapter Title
V
Pulsed
V
Pulsed
DS
DS
5
Page 4 of 6
Pulsed
= 5 V
= 10 V
1000
20
6