NP74N04YUG RENESAS [Renesas Technology Corp], NP74N04YUG Datasheet - Page 6

• Manufacturer Part Number: NP74N04YUG
• Description: MOS FIELD EFFECT TRANSISTOR
• Manufacturer: RENESAS [Renesas Technology Corp]

NP74N04YUG
Package Drawings (Unit: mm)
8-pin HSON (Mass: 0.13 g TYP.)
Equivalent Circuit
Remark
R07DS0017EJ0100 Rev.1.00
Jul 01, 2010
Strong electric field, when exposed to this device, can cause destruction of the gate oxide and
ultimately degrade the device operation. Steps must be taken to stop generation of static
electricity as much as possible, and quickly dissipate it once, when it has occurred.
1
0.4
2
3
4
Gate
0.6 ±0.15
6.0 ±0.2
5.4 ±0.2
3.18 ±0.2
0.73
8
7
6
5
0.8 ±0.15
Source
Drain
1, 2, 3
4
5, 6, 7, 8: Drain
Body
Diode
: Source
: Gate
0.10 S
Chapter Title
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