SI8800EDB_11 VISHAY [Vishay Siliconix], SI8800EDB_11 Datasheet - Page 3

• Manufacturer Part Number: SI8800EDB_11
• Description: N-Channel 20 V (D-S) MOSFET
• Manufacturer: VISHAY [Vishay Siliconix]

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Document Number: 66700
S11-1145-Rev. B, 13-Jun-11
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
0.15
0.12
0.09
0.06
0.03
0.00
1.5
1.2
0.9
0.6
0.3
0.0
15
12
9
6
3
0
0.0
0
0
Gate Current vs. Gate-Source Voltage
V
On-Resistance vs. Drain Current
0.5
GS
3
3
V
V
= 1.5 V
DS
GS
Output Characteristics
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
1.0
I
D
- Drain Current (A)
6
6
1.5
V
V
GS
GS
= 5 V thru 2 V
= 1.8 V
9
9
2.0
T
V
V
J
GS
V
V
GS
= 25 °C
GS
GS
= 2.5 V
12
12
= 4.5 V
2.5
= 1.5 V
= 1 V
This document is subject to change without notice.
3.0
15
15
10
10
10
10
10
10
-11
-1
-3
-5
-7
-9
5
4
3
2
1
0
8
6
4
2
0
0.0
0
0
Gate Current vs. Gate-Source Voltage
I
D
T
J
= 1 A
= 150 °C
1
0.3
3
V
V
GS
GS
Transfer Characteristics
Q
V
- Gate-to-Source Voltage (V)
g
- Gate-to-Source Voltage (V)
T
DS
- Total Gate Charge (nC)
C
2
= 125 °C
= 10 V
Gate Charge
0.6
6
V
T
DS
C
= 25 °C
V
= 5 V
3
DS
= 16 V
0.9
9
Vishay Siliconix
T
4
J
www.vishay.com/doc?91000
= 25 °C
Si8800EDB
T
C
1.2
12
= - 55 °C
5
www.vishay.com
1.5
15
6
3