SI8800EDB_11 VISHAY [Vishay Siliconix], SI8800EDB_11 Datasheet - Page 5

• Manufacturer Part Number: SI8800EDB_11
• Description: N-Channel 20 V (D-S) MOSFET
• Manufacturer: VISHAY [Vishay Siliconix]

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Note:
When mounted on 1" x 1" FR4 with full copper.
* The power dissipation P
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 66700
S11-1145-Rev. B, 13-Jun-11
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
25
T
A
Current Derating*
- Ambient Temperature (°C)
50
D
is based on T
75
100
J(max)
125
0.01
= 150 °C, using junction-to-ambient thermal resistance, and is more useful in settling the upper
100
0.1
Safe Operating Area, Junction-to-Ambient
This document is subject to change without notice.
10
1
0.1
* V
150
Single Pulse
GS
T
A
Limited by R
> minimum V
= 25 °C
V
DS
- Drain-to-Source Voltage (V)
1
DS(on)
BVDSS Limited
GS
at which R
*
0.8
0.6
0.4
0.2
0.0
10
DS(on)
25
is specified
100 μs
1 ms
10 ms
100 ms, 1 s
10 s, DC
50
T
A
100
- Ambient Temperature (°C)
Power Derating
75
100
Vishay Siliconix
www.vishay.com/doc?91000
Si8800EDB
125
www.vishay.com
150
5