SI8800EDB_11 VISHAY [Vishay Siliconix], SI8800EDB_11 Datasheet - Page 4

• Manufacturer Part Number: SI8800EDB_11
• Description: N-Channel 20 V (D-S) MOSFET
• Manufacturer: VISHAY [Vishay Siliconix]

Si8800EDB
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
www.vishay.com
4
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
0.14
0.12
0.10
0.08
0.06
0.04
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
- 50
On-Resistance vs. Gate-to-Source Voltage
0
On-Resistance vs. Junction Temperature
I
D
V
= 1.5 A; T
GS
- 25
= 4.5 V, V
1
V
T
GS
0
J
J
= 25 °C
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
GS
I
D
25
= 2.5 V, V
= 0.5 A; T
2
50
V
I
I
D
GS
D
J
GS
= 0.5 A; T
= 1.5 A; T
= 25 °C
3
75
= 1.8 V; I
= 1.5 V; I
14
12
10
8
6
4
2
0
0.001
100
J
J
D
D
= 125 °C
= 125 °C
4
Single Pulse Power (Junction-to-Ambient)
This document is subject to change without notice.
= 1 A
= 0.5 A
125
0.01
150
5
0.1
Time (s)
1
10
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
10
1
- 50
0.0
100
- 25
Source-Drain Diode Forward Voltage
0.2
V
1000
SD
0
- Source-to-Drain Voltage (V)
T
0.4
T
J
J
Threshold Voltage
25
- Temperature (°C)
= 150 °C
50
0.6
I
D
= 250 μA
75
S11-1145-Rev. B, 13-Jun-11
0.8
T
Document Number: 66700
J
www.vishay.com/doc?91000
= 25 °C
100
1.0
125
150
1.2