BUK75 NXP [NXP Semiconductors], BUK75 Datasheet - Page 6

• Manufacturer Part Number: BUK75
• Description: N-channel TrenchMOS standard level FET
• Manufacturer: NXP [NXP Semiconductors]

NXP Semiconductors
Table 5.
T
BUK75_7608-40B_2
Product data sheet
Symbol Parameter
V
t
Q
rr
j
Fig 5. Output characteristics: drain current as a
Fig 7. Drain-source on-state resistance as a function
SD
r
= 25 C unless otherwise specified.
R
(m )
(A)
DSon
I
D
300
200
100
16
12
0
8
4
T
function of drain-source voltage; typical values
T
of drain current; typical values.
0
0
source-drain voltage
reverse recovery time
recovered charge
j
j
= 25 C; t
= 25 C
Characteristics
20
14
12
6.0
2
6.5
p
= 300 s
100
7.0
4
V
GS
…continued
(V) = 10
9.5
9.0
8.5
8.0
7.5
7.0
6.5
6.0
5.5
5.0
4.5
8.0
6
200
V
GS
I
8
D
(V) = 10
003aac076
003aac077
Conditions
I
I
V
V
(A)
S
S
DS
GS
= 25 A; V
= 20 A; dI
20
(V)
Rev. 02 — 16 November 2007
= 10 V; V
300
10
GS
S
/dt = 100 A/ s;
= 0 V; see
DS
= 20 V
Fig 6. Drain-source on-state resistance as a function
Fig 8. Normalized drain-source on-state resistance
R
(m )
DSon
a
Figure 15
1.5
0.5
14
12
10
8
6
4
2
1
0
T
of gate-source voltage; typical values
factor as a function of junction temperature
a
5
60
j
= 25 C; I
=
N-channel TrenchMOS standard level FET
----------------------------- -
R
DSon 25 C
R
DSon
D
0
= 25 A
BUK75/7608-40B
10
60
Min
-
-
-
15
120
Typ
0.85
53
44
V
© NXP B.V. 2007. All rights reserved.
GS
003aac075
003aab851
T
j
(V)
( C)
Max
1.2
-
-
180
20
6 of 14
Unit
V
ns
nC