IRFZ14S/L IRF [International Rectifier], IRFZ14S/L Datasheet

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IRFZ14S/L

Manufacturer Part Number
IRFZ14S/L
Description
Advanced Process Technology / Surface Mount (IRFZ14S)
Manufacturer
IRF [International Rectifier]
Datasheet
Description
Third Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
The D
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D
its low internal connection resistance and can dissipate
up to 2.0W in a typical surface mount application.
The through-hole version (IRFZ14L) is available for low-
profile applications.
Absolute Maximum Ratings
Thermal Resistance
I
I
I
P
P
V
E
dv/dt
T
T
R
R
D
D
DM
2
STG
D
D
GS
AS
J
Pak is suitable for high current applications because of
@ T
@ T
JC
JA
Advanced Process Technology
Surface Mount (IRFZ14S)
Low-profile through-hole (IRFZ14L)
175°C Operating Temperature
Fast Switching
@T
@T
2
Pak is a surface mount power package capable of
C
C
A
C
= 25°C
= 100°C
= 25°C
= 25°C
on-resistance per silicon area.
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Junction-to-Case
Junction-to-Ambient ( PCB Mounted,steady-state)**
Parameter
Parameter
GS
GS
@ 10V
@ 10V
This
G
Typ.
300 (1.6mm from case )
–––
–––
D P a k
HEXFET
2
-55 to + 175
D
S
Max.
0.29
± 20
3.7
7.2
4.5
40
43
47
IRFZ14S/L
10
®
R
T O -2 6 2
Power MOSFET
DS(on)
Max.
V
3.5
40
DSS
I
D
= 10A
PD - 9.890A
= 60V
= 0.20
Units
Units
W/°C
°C/W
V/ns
°C
mJ
°C
W
W
A
V
8/25/97

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IRFZ14S/L Summary of contents

Page 1

... Storage Temperature Range STG Soldering Temperature, for 10 seconds Thermal Resistance R Junction-to-Case JC R Junction-to-Ambient ( PCB Mounted,steady-state)** JA G This Parameter @ 10V GS @ 10V GS Parameter PD - 9.890A IRFZ14S/L ® HEXFET Power MOSFET 60V DSS R = 0.20 DS(on 10A Max. ...

Page 2

... IRFZ14S/L Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Q Total Gate Charge ...

Page 3

... T J Fig 1. Typical Output Characteristics Fig 3. Typical Transfer Characteristics IRFZ14S Fig 2. Typical Output Characteristics Fig 4. Normalized On-Resistance Vs. Temperature ...

Page 4

... IRFZ14S/L Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 7. Typical Source-Drain Diode Forward Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 8. Maximum Safe Operating Area ...

Page 5

... Fig 9. Maximum Drain Current Vs. Case Temperature Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case IRFZ14S D.U. 10V Pulse Width µs Duty Factor Fig 10a. Switching Time Test Circuit V DS 90% 10 d(on) r Fig 10b. Switching Time Waveforms ...

Page 6

... IRFZ14S D.U. Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms Charge Fig 13a. Basic Gate Charge Waveform 0.01 V (BR)DSS V DD Fig 12c. Maximum Avalanche Energy Vs ...

Page 7

... Fig 14. For N-Channel HEXFETS Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer - + dv/dt controlled Driver same type as D.U.T. I controlled by Duty Factor "D" SD D.U.T. - Device Under Test P. Period Current di/dt Diode Recovery dv/dt Forward Drop 5% IRFZ14S =10V * ...

Page 8

... IRFZ14S Pak Package Outline 10.54 ( .415) 10.29 ( .405) 1.40 (.055 MAX. 2 1.78 (.070) 1.27 (.050 1.40 (.055) 3X 1.14 (.045) 5.08 ( .200 DIM ENS OLDE R DIP . 2 DIM ENS IO NING & TO LERA NCING PE R ANS I Y 14.5M, 1982 LLING DIME NSIO N : INCH SINK & LEAD DIMEN SION INCLUDE BURRS. ...

Page 9

... Package Outline TO-262 Outline Part Marking Information TO-262 IRFZ14S/L ...

Page 10

... IRFZ14S/L Tape & Reel Information 2 D Pak TIO TIO N 33 0.0 0 (14 EIA -418 . LLIN SIO ILLIM ...

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