IRFZ14S/L IRF [International Rectifier], IRFZ14S/L Datasheet - Page 2

• Manufacturer Part Number: IRFZ14S/L
• Description: Advanced Process Technology / Surface Mount (IRFZ14S)
• Manufacturer: IRF [International Rectifier]

IRFZ14S/L
Electrical Characteristics @ T
** When mounted on 1" square PCB (FR-4 or G-10 Material ).
Source-Drain Ratings and Characteristics
I
I
L
Notes:
V
R
V
g
Q
Q
Q
t
t
t
t
C
C
C
I
I
V
t
Q
t
DSS
GSS
d(on)
r
d(off)
f
SM
S
rr
on
S
V
fs
For recommended footprint and soldering techniques refer to application note #AN-994.
(BR)DSS
GS(th)
DS(on)
iss
oss
rss
SD
g
gs
gd
rr
Repetitive rating; pulse width limited by
V
I
(BR)DSS
R
T
max. junction temperature. ( See fig. 11 )
SD
DD
J
G
= 25 , I
= 25V starting T
175°C
10A, di/dt
/ T
J
Drain-to-Source Leakage Current
Internal Source Inductance
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
AS
= 10A. (See Figure 12)
90A/µs, V
J
= 25°C, L = 548µH
Parameter
Parameter
DD
V
(BR)DSS
J
,
= 25°C (unless otherwise specified)
Pulse width
Uses IRFZ14 data and test conditions
––– 0.063 –––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min. Typ. Max. Units
2.0
2.4
Min. Typ. Max. Units
60
–––
–––
–––
–––
–––
Intrinsic turn-on time is negligible (turn-on is dominated by L
–––
–––
–––
–––
–––
–––
–––
––– -100
–––
–––
–––
300
160
–––
–––
–––
200
7.5
29
10
50
13
19
70
0.20
–––
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
140
400
4.0
250
3.1
5.8
300µs; duty cycle
11
1.6
25
40
10
V/°C
nH
µA
nA
nC
ns
pF
nC
ns
V
V
S
A
V
V
V
V
V
V
V
V
V
ƒ = 1.0MHz, See Fig. 5
Reference to 25°C, I
V
V
V
V
I
I
R
R
Between lead,
and center of die contact
V
MOSFET symbol
showing the
p-n junction diode.
T
T
di/dt = 100A/µs
integral reverse
D
D
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
DS
J
J
G
D
= 10A
= 10A
= 25°C, I
= 25°C, I
= 24
= 2.7
= 0V, I
=10V, I
= V
= 25V, I
= 60V, V
= 48V, V
= 20V
= -20V
= 48V
= 10V, See Fig. 6 and 13
= 30V
= 0V
= 25V
2%.
GS
, I
D
See Fig. 10
D
S
F
D
D
Conditions
= 250µA
GS
GS
Conditions
= 6.0A
= 10A, V
= 10A
= 250µA
= 6.0A
= 0V
= 0V, T
D
GS
=1mA
J
= 150°C
= 0V
G
S
+L
D
D
S
)