H57V2622GMR-60X HYNIX [Hynix Semiconductor], H57V2622GMR-60X Datasheet - Page 10

• Manufacturer Part Number: H57V2622GMR-60X
• Description: 256Mb : x32 Dual Die Synchronous DRAM
• Manufacturer: HYNIX [Hynix Semiconductor]

DC CHARACTERISTICS II
Note:
1. I
2. Min. of tRC (Refresh RAS cycle time) is shown at AC CHARACTERISTICS II
3. H57V2622GMR-XXC : Normal,
Rev 1.0 / Oct. 2009
Operating Current
Precharge Standby
Current
in Power Down Mode
Precharge Standby
Current
in Non Power Down
Mode
Active Standby Current
in Power Down Mode
Active Standby
Current in Non Power
Down Mode
Burst Mode Operating
Current
Auto Refresh Current
Self Refresh Current
DD1
Parameter
and I
DD4
depend on output loading and cycle rates. Specified values are measured with the output open.
I
I
I
I
I
I
I
I
I
I
I
I
DD1
DD2P
DD2PS
DD2N
DD2NS
DD3P
DD3PS
DD3N
DD3NS
DD4
DD5
DD6
Symbol
H57V2622GMR-XXL : Low Power
Burst length=1, One bank active
t
CKE ≤ V
CKE ≤ V
CKE ≥ V
Input signals are changed one time during 2clks.
All other pins ≥ V
CKE ≥ V
Input signals are stable.
CKE ≤ V
CKE ≤ V
CKE ≥ V
Input signals are changed one time during 2clks.
All other pins ≥ V
CKE ≥ V
Input signals are stable.
t
t
CKE ≤ 0.2V
RC
CK
All banks active
RC
(Commercial : TA = 0~70℃, Industrial : TA = -40~85℃)
≥ t
≥ t
≥ t
CK
RC
RC
IL
IL
IH
IH
IL
IL
IH
IH
(min), I
(min), I
(min), All banks active
(max), t
(max), t
(max), t
(max), t
(min), CS ≥ V
(min), t
(min), CS ≥ V
(min), t
Test Condition
OL
OL
DD
DD
CK
CK
CK
CK
CK
CK
=0mA
=0mA
-0.2V or ≤ 0.2V
-0.2V or ≤ 0.2V
= ∞
= ∞
= 15ns
= ∞
= 15ns
= ∞
IH
IH
(min), t
(min), t
Synchronous DRAM Memory 256Mbit
CK
CK
= 15ns
= 15ns
Low Power
Low Power
Low Power
Normal
Normal
Normal
166
160
200
400
H57V2622GMR Series
Speed
2.0
1.6
2.0
1.6
1.6
18
15
40
35
8
8
4
133
140
200
380
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
Note
3
3
1
3
1
2
10