H57V2622GMR-60X HYNIX [Hynix Semiconductor], H57V2622GMR-60X Datasheet - Page 9

• Manufacturer Part Number: H57V2622GMR-60X
• Description: 256Mb : x32 Dual Die Synchronous DRAM
• Manufacturer: HYNIX [Hynix Semiconductor]

CAPACITANCE
DC CHARACTERRISTICS I
Note:
Rev 1.0 / Oct. 2009
1. VIN = 0 to 3.6V, All other balls are not tested under VIN =0V
2. DOUT is disabled, VOUT=0 to 3.6
Input capacitance
Data input / output
capacitance
Input Leakage Current
Output Leakage Current
Output High Voltage
Output Low Voltage
Parameter
Output
Parameter
(Commercial : TA = 0~70℃, Industrial : TA = -40~85℃ , f=1MHz)
DC Output Load Circuit
CLK
A0 ~ A11, BA0, BA1, CKE, CS, RAS, CAS, WE
DQM0 ~ DQM3
DQ0 ~ DQ31
(Commercial : TA = 0~70℃, Industrial : TA = -40~85℃)
50pF
VTT =
RT = 250
1.4V
Pin
Symbol
Ohom
V
V
I
I
LO
OH
OL
LI
Output
Min
Synchronous DRAM Memory 256Mbit
2.4
-1
-1
-
AC Output Load Circuit
Z0 = 50 Ohom
Symbol
Max
CI/O
0.4
CI1
CI2
CI3
1
1
-
H57V2622GMR Series
Unit
Min
uA
uA
4.0
4.0
4.0
3.5
V
V
50pF
RT = 50
VTT =
1.4V
Ohom
Max
IOL = +4mA
IOH = -4mA
8.0
8.0
8.0
6.5
Note
1
2
Unit
pF
pF
pF
pF
9