MBN400C33A HITACHI [Hitachi Semiconductor], MBN400C33A Datasheet
MBN400C33A
Manufacturer Part Number
MBN400C33A
Description
Silicon N-channel IGBT
Manufacturer
HITACHI [Hitachi Semiconductor]
Datasheet
1.MBN400C33A.pdf
(4 pages)
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Company:
Part Number:
MBN400C33A
Manufacturer:
HITACH
Quantity:
1 000
Part Number:
MBN400C33A
Manufacturer:
HITACH
Quantity:
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Part Number:
MBN400C33A
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60
Collector Emitter Cut-Off Current
Gate Emitter Leakage Current
Input Capacitance
Silicon N-channel IGBT
FEATURES
* High thermal fatigue durability.
* low noise due to built-in free-wheeling
*High speed,low loss IGBT module.
*Low driving power due to low input
*High reliability,high durability module.
* Isolated head sink (terminal to base).
ABSOLUTE MAXIMUM RATINGS (Tc=25
Collector Emitter Voltage
Gate Emitter Voltage
Collector Current
Forward Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Isolation Voltage
Screw Torque
Notes: (1)Recommended Value 1.8±0.2/9±1N.m
CHARACTERISTICS (Tc=25
Collector Emitter Saturation Voltage
Gate Emitter Threshold Voltage
Switching Times
Peak Forward Voltage Drop
Reverse Recovery Time
Thermal Impedance
Notes:(3) R
diode - ultra soft fast recovery diode(USFD).
capacitance MOS gate.
IGBT MODULE
(delta Tc=70°C,N>20,000cycles)
MBN400C33A
(4) Counter arm IGBT V
Item
Determine the suitable R
(overshoot voltage,etc.)with appliance mounted.
G
value is the test condition’s value for decision of the switching times, not recommended value.
Item
IGBT
FWD
Turn On Time
Rise Time
Fall Time
Turn Off Time
Terminals
Mounting
(M4/M8)
(M5)
GE
1ms
1ms
DC
DC
°C
=-15V
)
G
value after the measurement of switching waveforms
Symbol
Rth(j-c)
Rth(j-c)
V
V
Symbol
I
I
GE(TO)
CE(sat)
C
V
GES
t
t
CES
V
V
t
V
t
on
t
off
FM
T
ies
rr
r
I
Pc
f
I
°C
CES
GES
I
I
FM
T
Cp
ISO
stg
-
-
C
F
j
)
°C/W
Unit
mA
(2)Recommended Value 2.6±0.2N.m
nA
nF
ms
ms
V
V
V
OUTLINE DRAWING
Weight: 720 (g)
Unit
V
N.m
°C
°C
W
Min.
V
RMS
V
A
A
4.0
-
-
-
-
-
-
-
-
-
-
-
-
4- 5.8
2-M8
2-M4
Typ.
4.5
5.5
1.6
2.3
50
2.1
3.4
3.0
0.5
-
-
-
-
0.025
Max.
±200 V
0.05
5.5
7.0
2.6
3.2
2.8
5.3
4.0
0.9
4.0 V
-
E
TERMINALS
G
E
I
V
V
V
L=150nH
R
V
-Ic=400A,V
Vcc=1,650V,-Ic=400A,L=150nH,
Tc=125°C (4)
C
CE
GE
CE
CE
CC
G
GE
=400A,V
=10W
5,400(AC 1 minute)
=3,300V,V
=10V, I
=10V,V
=±20V,V
=1,650V,Ic=400A
=±15V Tc=125°C
MBN400C33A
-40 ~ +125
-40 ~ +125
C
3,300
4,000
Test Conditions
GE
C
400
GE
Junction to case
±20
400
800
800
GE
(3)
CE
=15V
=400mA
2/10
=0V,f=100KHz
=0V
2.8
GE
=0V
=0V
PDE-N400C33A-0
(2)
(1)
Unit in mm
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Datasheet:
MBN400C33A Summary of contents
Page 1
... 3 0.5 rr °C/W Rth(j- Rth(j- value after the measurement of switching waveforms G Unit TERMINALS MBN400C33A 3,300 ±20 400 800 400 800 4,000 -40 ~ +125 -40 ~ +125 5,400(AC 1 minute) 2/10 (1) 2.8 (2) Max. Test Conditions 4.0 V =3,300V,V = ±200 V =±20V,V = 5.5 I =400A,V ...
Page 2
15V 14V 13V 12V 500 Collector to Emitter Voltage Collector current vs. Collector to Emitter voltage 1000 125 C 500 0 0 ...
Page 3
TYPICAL 1 [Conditions] V 1650V,Tc 125 15V, 150nH Inductive Load 0.8 0.6 0.4 0 100 200 300 400 Collector Current I (A) C Turn-off Loss vs. Collector Current 1 [Conditions] V 1650V,Tc ...
Page 4
HITACHI POWER SEMICONDUCTORS 1. The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are adviced to contact Hitachi sales department for the latest version of this ...