MBN400C33A HITACHI [Hitachi Semiconductor], MBN400C33A Datasheet - Page 2

• Manufacturer Part Number: MBN400C33A
• Description: Silicon N-channel IGBT
• Manufacturer: HITACHI [Hitachi Semiconductor]

1000
1000
Collector current vs. Collector to Emitter voltage
500
500
4
3
2
1
0
0
0
0
0
0
Tc 25 C
Switching time vs. Collector current
Collector to Emitter Voltage, V
V
Tc 25 C
Tc 125 C
Forward voltage of free-wheeling diode
GE
100
0
2
1
Collector Current, I
Forward Voltage, V
200
4
2
[Conditions]
V
V
Lp 150nH
Inductive Load
CC
GE
15V
1650V,Tc 125 C
300
15V,RG 10
6
3
14V 13V
C
(A)
CE
F
12V
400
(V)
8
4
TYPICAL
TYPICAL
(V)
TYPICAL
tr
td(off)
trr
tf
td(on)
11V
10V
9V
8V
7V
500
10
5
1000
1000
Collector current vs. Collector to Emitter voltage
500
0.1
0.8
0.6
0.4
0.2
10
1
0
1
0
0.1
0
0
Capacitance vs. Collector to Emitter Voltage
[Conditions]
Tc 125 C
V
V
Turn-on Loss vs. Collector Current
Lp 150nH
Inductive Load
Tc 25 C
CC
GE
Collector to Emitter Voltage, V
Collector to Emitter Voltage, V
1650V,Tc 125 C
100
15V,RG 10
2
Collector Current I
1
200
4
300
6
10
C
(A)
15V
CE
400
CE
8
TYPICAL
TYPICAL
TYPICAL
14V
10%
(V)
full
(V)
PDE-N400C33A-0
Cies
Coes
Cres
13V
12V
11V
10V
9V
8V
7V
100
500
10