TLP523_07 TOSHIBA [Toshiba Semiconductor], TLP523_07 Datasheet

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TLP523_07

Manufacturer Part Number
TLP523_07
Description
GaAs Ired & Photo−Transistor
Manufacturer
TOSHIBA [Toshiba Semiconductor]
Datasheet
Programmable Controllers
DC−Output Module
Solid State Relay
The TOSHIBA TLP523, −2 and −4 consists of a gallium arsenide
infrared emitting diode coupled with a silicon, darlington connected,
phototransistor which has an integral base−emitter resistor to optimize
switching speed and elevated temperature characteristics.
The TLP523−2 offers two isolated channels in an eight lead plastic DIP
package, while the TLP523−4 provide four isolated channels per
package.
Pin Configurations
1
2
1 : Anode
2 : Cathode
3 : Emitter
4 : Collector
Current transfer ratio: 500% (min.) (I
Isolation voltage: 2500 Vrms (min.)
Collector−emitter voltage: 55 V (min.)
Leakage current: 10μA (max.) (Ta = 85°C)
UL recognized: UL1577, file no. E67349
TLP523
TLP523, TLP523−2, TLP523−4
4
3
1
2
3
4
1, 3 : Anode
2, 4 : Cathode
5, 7 : Emitter
6, 8 : Collector
TOSHIBA Photocoupler GaAs Ired & Photo−Transistor
(top view)
TLP523-2
F
= 1 mA)
8
7
6
5
1, 3, 5, 7
2, 4, 6, 8
9, 11, 13, 15
10, 12, 14, 16
1
2
3
4
5
6
7
8
TLP523-4
1
: Anode
: Cathode
: Emitter
: Collector
16
15
14
13
12
11
10
9
TLP523,TLP523−2,TLP523−4
Weight: 0.26 g
Weight: 0.54 g
Weight: 1.1 g
TOSHIBA
TOSHIBA
TOSHIBA
11 − 10C4
11 − 20A3
11 − 5B2
2007-10-01
Unit in mm

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TLP523_07 Summary of contents

Page 1

TOSHIBA Photocoupler GaAs Ired & Photo−Transistor TLP523, TLP523−2, TLP523−4 Programmable Controllers DC−Output Module Solid State Relay The TOSHIBA TLP523, −2 and −4 consists of a gallium arsenide infrared emitting diode coupled with a silicon, darlington connected, phototransistor which has an ...

Page 2

Absolute Maximum Ratings Characteristic Forward current Forward current derating Pulse forward current Reverse voltage Collector−emitter voltage Emitter−collector voltage Collector current Collector power dissipation (1 circuit) Collector power dissipation derating (1 circuit (Ta ≥ 25°C)) Operating temperature range Storage temperature range ...

Page 3

Electrical Characteristics Characteristic Forward voltage Reverse current Capacitance Collector−emitter breakdown voltage Collector dark current Capacitance collector to emitter Current transfer ratio Collector−emitter saturation voltage Capacitance input to output Isolation resistance Switching Characteristics Characteristic Turn−on time Turn−off time Switching Time Test ...

Page 4

I – 100 80 TLP523 60 TLP523 - - Ambient temperature Ta (℃) I – 5000 Pulse width ≤ 100μs 3000 Ta = 25℃ 1000 500 ...

Page 5

I – 300 25°C 100 Sample 0.3 Forward current I F (mA) V – CE(sat) Test condition ...

Page 6

I – 500 300 Sample 1 100 0.5 0.3 0.1 0.1 0 Collector-emitter voltage V CE Switching Time 10V Ta = 25℃ ...

Page 7

RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to ...

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