BUK446-800B PHILIPS [NXP Semiconductors], BUK446-800B Datasheet
BUK446-800B
Related parts for BUK446-800B
BUK446-800B Summary of contents
Page 1
... PIN CONFIGURATION case CONDITIONS MIN ˚ 100 ˚ ˚ ˚ CONDITIONS with heatsink compound 1 Product Specification BUK446-800A/B MAX. MAX. UNIT -800A -800B 800 800 2.0 1 SYMBOL MAX. UNIT - 800 V - 800 ...
Page 2
... V = 800 ˚ 800 =125 ˚ BUK446-800A 1.5 A BUK446-800B D CONDITIONS 1 MHz 2 gen ...
Page 3
... Fig.5. Typical output characteristics BUK446-800A 100 100 1000 = 25 ˚C Fig.6. Typical on-state resistance Product Specification BUK446-800A/B Zth / (K/W) BUKx46- 0.5 0.2 0.1 0.05 0. 1E-05 1E-03 1E- Fig.4. Transient thermal impedance. ...
Page 4
... f 10000 1000 100 10 80 100 120 140 Fig.12. Typical capacitances f Product Specification BUK446-800A/B VGS(TO max. typ. min. -40 - 100 120 140 Fig.10. Gate threshold voltage. = f(T ); conditions mA ...
Page 5
... Fig.13. Typical turn-on gate-charge characteristics f(Q ); conditions parameter May 1995 BUK4y6-800 150 640 Fig.14. Typical reverse diode current f SDS 5 Product Specification BUK446-800A/B BUK4y6-800A 25 1 VSDS / V ); conditions parameter T GS Rev 1.200 2 j ...
Page 6
... Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent damage to MOS gate oxide. 2. Refer to mounting instructions for F-pack envelopes. 3. Epoxy meets UL94 V0 at 1/8". May 1995 10.2 max 5.7 max 3.2 3.0 4 0.9 M 0.4 0.7 2.54 5.08 top view 6 Product Specification BUK446-800A/B 4.4 max 0.9 0.5 2.9 max 4.4 4.0 7.9 7.5 seating plane 13.5 min 0.55 max 1.3 Rev 1.200 17 max ...
Page 7
... Philips customers using or selling these products for use in such applications their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. May 1995 7 Product Specification BUK446-800A/B Rev 1.200 ...