EN29LV400A ETC, EN29LV400A Datasheet

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EN29LV400A

Manufacturer Part Number
EN29LV400A
Description
4 Megabit (512K X 8-bit / 256K X 16-bit) Flash Memory Boot Sector Flash Memory
Manufacturer
ETC
Datasheet

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• 3V, single power supply operation
- Full voltage range: 2.7-3.6 volt read and write
- Regulated voltage range: 3.0-3.6 volt read
• High performance
- Access times as fast as 45 ns
• Low power consumption (typical values at 5
- 7 mA typical active read current
- 15 mA typical program/erase current
- 1 µA typical standby current (standard access
• Flexible Sector Architecture:
- One 16 K-byte, two 8 K-byte, one 32 K-byte,
- One 8 K-word, two 4 K-word, one 16 K-word
• Sector protection:
- Hardware locking of sectors to prevent
- Additionally, temporary Sector Unprotect
GENERAL DESCRIPTION
The EN29LV400A is a 4-Megabit, electrically erasable, read/write non-volatile flash memory,
organized as 524,288 bytes or 256,144 words. Any byte can be programmed typically in 8µs. The
EN29LV400A features 3.0V voltage read and write operation, with access times as fast as 45ns to
eliminate the need for WAIT states in high-performance microprocessor systems.
The EN29LV400A has separate Output Enable (OE#), Chip Enable (CE#), and Write Enable (WE#)
controls, which eliminate bus contention issues. This device is designed to allow either single
Sector or full chip erase operation, where each Sector can be individually protected against
program/erase operations or temporarily unprotected to erase or program. The device can sustain
a minimum of 100K program/erase cycles on each Sector.
and write operations for compatibility with
high performance 3.3 volt microprocessors.
time to active mode)
and seven 32 K-word sectors (word mode)
MHz)
allows code changes in previously locked
sectors.
EN29LV400A
4 Megabit (512K x 8-bit / 256K x 16-bit) Flash Memory
Boot Sector Flash Memory, CMOS 3.0 Volt-only
operations for battery-powered applications.
and seven 64 K-byte sectors (byte mode)
program or erase operations within individual
sectors
FEATURES
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
Rev. A, Issue Date: 2005/01/07
1
• High performance program/erase speed
- Byte/Word program time: 8µs typical
- Sector erase time: 500ms typical
• JEDEC Standard Embedded Erase and
• JEDEC standard DATA# polling and toggle
• Single Sector and Chip Erase
• Sector Unprotect Mode
• Erase Suspend / Resume modes:
• triple-metal double-poly triple-well CMOS
• Low Vcc write inhibit < 2.5V
• Package Options
- 48-pin TSOP (Type 1)
- 48-ball 6mm x 8mm FBGA
• Commercial and Industrial Temperature
Read or program another Sector during
Erase Suspend Mode
Program Algorithms
bits feature
Flash Technology
minimum 1,000K program/erase endurance
cycle
Range
©2005 Eon Silicon Solution, Inc., www.essi.com.tw
EN29LV400A

Related parts for EN29LV400A

EN29LV400A Summary of contents

Page 1

... The EN29LV400A is a 4-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 524,288 bytes or 256,144 words. Any byte can be programmed typically in 8µs. The EN29LV400A features 3.0V voltage read and write operation, with access times as fast as 45ns to eliminate the need for WAIT states in high-performance microprocessor systems. ...

Page 2

... DQ12 Vcc DQ2 DQ10 DQ11 DQ0 DQ8 DQ9 CE# OE# ©2005 Eon Silicon Solution, Inc., www.essi.com.tw 2 Rev. A, Issue Date: 2005/01/07 EN29LV400A 48 A16 47 BYTE# 46 Vss 45 DQ15/A-1 44 DQ7 43 DQ14 42 DQ6 41 DQ13 40 DQ5 39 DQ12 38 DQ4 37 Vcc 36 DQ11 35 DQ3 ...

Page 3

... Not Connected to anything BYTE# Byte/Word Mode This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. FIGURE 1. LOGIC DIAGRAM A0 - A17 Reset# CE# OE# WE# Byte# ©2005 Eon Silicon Solution, Inc., www.essi.com.tw 3 Rev. A, Issue Date: 2005/01/07 EN29LV400A EN29LV400A DQ0 – DQ15 (A-1) RY/BY# ...

Page 4

... Eon Silicon Solution, Inc., www.essi.com.tw 4 Rev. A, Issue Date: 2005/01/07 EN29LV400A A15 A14 A13 A12 ...

Page 5

... Eon Silicon Solution, Inc., www.essi.com.tw 5 Rev. A, Issue Date: 2005/01/07 EN29LV400A A15 A14 A13 A12 ...

Page 6

... Block Protect Switches Erase Voltage Generator Chip Enable Output Enable Logic Y-Decoder STB Timer X-Decoder ©2005 Eon Silicon Solution, Inc., www.essi.com.tw 6 Rev. A, Issue Date: 2005/01/07 EN29LV400A EN29LV400A -55R -70 - DQ0-DQ15 (A-1) Input/Output Buffers STB Data Latch ...

Page 7

... ©2005 Eon Silicon Solution, Inc., www.essi.com.tw 7 Rev. A, Issue Date: 2005/01/07 EN29LV400A DQ8-DQ15 Byte# Byte# DQ0-DQ7 = High-Z OUT OUT D D High High-Z High-Z High-Z High-Z High-Z High-Z ...

Page 8

... See the “Reset Command” additional details. Output Disable Mode When the OE# pin logic high level (VIH), the output from the EN29LV400A is disabled. The output pins are placed in a high impedance state. Auto Select Identification Mode The autoselect mode provides manufacturer and device identification, and sector protection verification, through identifier codes output on DQ15– ...

Page 9

... When doing Sector Unprotect, all the other sectors should be protected first. The second method is meant for programming equipment. This method requires V both OE# and A9 pin and non-standard microprocessor timings are used. This method is described in a separate document called EN29LV400A Supplement, representative of Eon Silicon Devices, Inc. Temporary Sector Unprotect This feature allows temporary unprotection of previously protected sector groups to change data while in-system ...

Page 10

... This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. + 30ns. The automatic sleep mode is acc , the device will not accept commands on the rising edge of IH ©2005 Eon Silicon Solution, Inc., www.essi.com.tw 10 Rev. A, Issue Date: 2005/01/07 EN29LV400A . The LKO ...

Page 11

... COMMAND DEFINITIONS The operations of the EN29LV400A are selected by one or more commands written into the command register to perform Read/Reset Memory, Read ID, Read Sector Protection, Program, Sector Erase, Chip Erase, Erase Suspend and Erase Resume. Commands are made up of data sequences written at specific addresses via the command register. ...

Page 12

... Word / Byte Programming Command The device may be programmed by byte or by word, depending on the state of the Byte# Pin. Programming the EN29LV400A is performed by using a four bus-cycle operation (two unlock write cycles followed by the Program Setup command and Program Data Write cycle). When the program command is executed, no additional CPU controls or timings are necessary ...

Page 13

... The Erase Suspend command is ignored if written during the chip erase operation or Embedded Program algorithm. Addresses are don’t-cares when writing the Erase Suspend command. This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. ©2005 Eon Silicon Solution, Inc., www.essi.com.tw 13 Rev. A, Issue Date: 2005/01/07 EN29LV400A ...

Page 14

... Another Erase Suspend command can be written after the device has resumed erasing. WRITE OPERATION STATUS DQ7: DATA# Polling The EN29LV400A provides DATA# polling on DQ7 to indicate the status of the embedded operations. The DATA# polling feature is active during the embedded Programming, Sector Erase, Chip Erase, and Erase Suspend. (See Table 6) When the embedded Programming is in progress, an attempt to read the device will produce the complement of the data written to DQ7 ...

Page 15

... Erase Suspend mode the standby mode. DQ6: Toggle Bit I The EN29LV400A provides a “Toggle Bit” on DQ6 to indicate the status of the embedded programming and erase operations. (See Table 6) During an embedded Program or Erase operation, successive attempts to read data from the device at any address (by active OE# and CE#) will result in DQ6 toggling between “ ...

Page 16

... This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. DQ7 DQ6 DQ5 DQ7# Toggle 0 0 Toggle Toggle Data Data Data DQ7# Toggle 0 ©2005 Eon Silicon Solution, Inc., www.essi.com.tw 16 Rev. A, Issue Date: 2005/01/07 EN29LV400A DQ3 DQ2 RY/BY# No N/A 0 toggle 1 Toggle 0 N/A Toggle 1 Data Data 1 N/A N/A 0 ...

Page 17

... Chip Erase, Erase or Erase suspend on currently addressed Sector. (When DQ5=1, Erase Error due to currently addressed Sector. Program during Erase Suspend on- going at current address Erase Suspend read on DQ2 non Erase Suspend Sector ©2005 Eon Silicon Solution, Inc., www.essi.com.tw 17 Rev. A, Issue Date: 2005/01/07 EN29LV400A ...

Page 18

... See the Command Definitions section for more information on WORD mode. 555H / AAH 2AAH / 55H 555H / A0H PROGRAM ADDRESS / PROGRAM DATA This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. START Last Address? Yes ©2005 Eon Silicon Solution, Inc., www.essi.com.tw 18 Rev. A, Issue Date: 2005/01/07 EN29LV400A ...

Page 19

... See the Command Definitions section for more information on WORD mode. Chip Erase 555H/AAH 2AAH/55H 555H/80H 555H/AAH 2AAH/55H 555H/10H This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. Sector Erase 555H/AAH 2AAH/55H 555H/80H 555H/AAH 2AAH/55H Sector Address/30H ©2005 Eon Silicon Solution, Inc., www.essi.com.tw 19 Rev. A, Issue Date: 2005/01/07 EN29LV400A ...

Page 20

... Read Data DQ7 = Data? No DQ5 = 1? Read Data (1) DQ7 = Data? Fail Read Data twice DQ6 = Toggle? No DQ5 = 1? Read Data twice (2) DQ6 = Toggle? ©2005 Eon Silicon Solution, Inc., www.essi.com.tw 20 Rev. A, Issue Date: 2005/01/07 EN29LV400A Yes No Yes Yes No Pass Start No Yes Yes No Yes Fail Pass ...

Page 21

... Wait 0.4 µs Read from sector address with Data = 01h? Yes Yes Yes Protect another sector? No Remove V ID from RESET# Write reset command Sector Protect complete ©2005 Eon Silicon Solution, Inc., www.essi.com.tw 21 Rev. A, Issue Date: 2005/01/07 EN29LV400A Reset PLSCNT = 1 ...

Page 22

... Wait 0.4 µS Read from sector address with Set up next sector Data = 00h? address Yes No Last sector verified? Yes Remove V from Write reset ID RESET# command ©2005 Eon Silicon Solution, Inc., www.essi.com.tw 22 Rev. A, Issue Date: 2005/01/07 EN29LV400A Sector Unprotect complete ...

Page 23

... Vcc ± 0 Vss ± 0 -0.5 0.7 x Vcc Vcc Vcc - = -100 µ 0.4V 10 2.3 ©2005 Eon Silicon Solution, Inc., www.essi.com.tw 23 Rev. A, Issue Date: 2005/01/07 EN29LV400A Max Unit Typ ±1 µA ±1 µ 0.4 1 5.0 µ 5.0 µ ...

Page 24

... Output timing measurement reference levels This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 3.3 V Ω 2.7 k Ω 6.2 k -45R -55R -70 1 TTL Gate 0.0-3.0 0.0-3.0 0.0-3.0 1.5 1.5 1.5 1.5 1.5 1.5 ©2005 Eon Silicon Solution, Inc., www.essi.com.tw 24 Rev. A, Issue Date: 2005/01/07 EN29LV400A -90 Unit 100 0.0-3.0 V 1.5 V 1.5 V ...

Page 25

... This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. Speed options Test Setup -45R Max Max Min Min READY t RH ©2005 Eon Silicon Solution, Inc., www.essi.com.tw 25 Rev. A, Issue Date: 2005/01/07 EN29LV400A Unit -55R -70 -90 µs 20 500 nS 500 ...

Page 26

... Note: Switching BYTE# pin not allowed during embedded operations This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. -45R -55R Min 0 Min 0 Min 0 t BCS t RBH ©2005 Eon Silicon Solution, Inc., www.essi.com.tw 26 Rev. A, Issue Date: 2005/01/07 EN29LV400A Speed Unit -70 - ...

Page 27

... Max OE Max Max Max Min t RC Addresses Stable t ACC Output Valid ©2005 Eon Silicon Solution, Inc., www.essi.com.tw 27 Rev. A, Issue Date: 2005/01/07 EN29LV400A Speed Options -45R -55R -70 -90 Unit ...

Page 28

... Toggle and Min 10 Data# Polling Min 0 Min 0 Min 0 Min 25 Min 20 Typ 8 Max 300 Typ 0.5 Min 50 Min 500 ID ©2005 Eon Silicon Solution, Inc., www.essi.com.tw 28 Rev. A, Issue Date: 2005/01/07 EN29LV400A -70 -90 Unit ...

Page 29

... Toggle and Min 10 Data# Polling Min 0 Min 0 Min 0 Min 25 Min 20 Typ 8 Max 300 Typ 0.5 Min 50 Min 500 ©2005 Eon Silicon Solution, Inc., www.essi.com.tw 29 Rev. A, Issue Date: 2005/01/07 EN29LV400A -70 -90 Unit ...

Page 30

... Test Setup Typ 7 OUT 9.5 Test Conditions 150°C 125°C ©2005 Eon Silicon Solution, Inc., www.essi.com.tw 30 Rev. A, Issue Date: 2005/01/07 EN29LV400A Comments to erasure Minimum 100K cycles Max 12.0 V Vcc + 1.0 V 100 mA Max Unit 12.5 pF Min Unit 10 Years 20 ...

Page 31

... Read Status Data (last two cycles 0x555 for chip erase WHWH2 WHWH3 0x30 Status t BUSY ©2005 Eon Silicon Solution, Inc., www.essi.com.tw 31 Rev. A, Issue Date: 2005/01/07 EN29LV400A VA D OUT t RB =true data at read address. out ...

Page 32

... This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. Program Command Sequence (last 2 cycles WHWH1 PD Status t BUSY is the true data at the program address. OUT ©2005 Eon Silicon Solution, Inc., www.essi.com.tw 32 Rev. A, Issue Date: 2005/01/07 EN29LV400A PA D OUT t RB ...

Page 33

... Comple- True Complement ment Status True Status Data Data Valid Status Valid Status (second (stops toggling) d) ©2005 Eon Silicon Solution, Inc., www.essi.com.tw 33 Rev. A, Issue Date: 2005/01/07 EN29LV400A VA Valid Data Valid Data VA VA Valid Data ...

Page 34

... PD for Program 0x30 for Sector Erase 0x10 for Chip Erase Enter Erase Erase Suspend Suspend Program Enter Enter Suspend Suspend Read Program ©2005 Eon Silicon Solution, Inc., www.essi.com.tw 34 Rev. A, Issue Date: 2005/01/07 EN29LV400A D OUT Erase Resume Erase Erase Erase Suspend Complete Read ...

Page 35

... Valid Valid 60h 40h Verify Sector Protect: 150 uS Sector Unprotect Speed Option -45R -55R Min Min ©2005 Eon Silicon Solution, Inc., www.essi.com.tw 35 Rev. A, Issue Date: 2005/01/07 EN29LV400A 0V t VIDR Valid Status >0.4 µ S Unit -70 -90 500 µ ...

Page 36

... FIGURE 14. TSOP 12mm x 20mm This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. ©2005 Eon Silicon Solution, Inc., www.essi.com.tw 36 Rev. A, Issue Date: 2005/01/07 EN29LV400A ...

Page 37

... This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. ©2005 Eon Silicon Solution, Inc., www.essi.com.tw 37 Rev. A, Issue Date: 2005/01/07 EN29LV400A ...

Page 38

... FIGURE 15. FBGA 6mm x 8mm This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. ©2005 Eon Silicon Solution, Inc., www.essi.com.tw 38 Rev. A, Issue Date: 2005/01/07 EN29LV400A ...

Page 39

... V for periods up to 20ns. See figure cc 1 Value - Regulated Voltage Range: 3.0-3.6 Standard Voltage Range: 2.7 to 3.6 Vcc +1.5V Maximum Positive Overshoot ©2005 Eon Silicon Solution, Inc., www.essi.com.tw 39 Rev. A, Issue Date: 2005/01/07 EN29LV400A Unit °C °C ° –1.0V for ss Unit °C V Waveform ...

Page 40

... BOOT CODE SECTOR ARCHITECTURE T = Top Sector B = Bottom Sector BASE PART NUMBER EN = Eon Silicon Solution Inc. 29LV = FLASH, 3V Read Program Erase 400 = 4 Megabit (512K 256K x 16 Version Identifier ©2005 Eon Silicon Solution, Inc., www.essi.com.tw 40 Rev. A, Issue Date: 2005/01/07 EN29LV400A ...

Page 41

... Revisions List Revision No Description A Initial Release This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. ©2005 Eon Silicon Solution, Inc., www.essi.com.tw 41 Rev. A, Issue Date: 2005/01/07 EN29LV400A Date 2004/01/07 ...

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