NT511740C5J Nanya Technology, NT511740C5J Datasheet
NT511740C5J
Related parts for NT511740C5J
NT511740C5J Summary of contents
Page 1
NT5117405J 4,194,304-word X 4-bit Dynamic RAM : Fast Page Mode with EDO NT 511740C5J Data Sheet 1 reserves the right to change products and specifications without notice. © ...
Page 2
NT5117405J 4,194,304-word X 4-bit Dynamic RAM : Fast Page Mode with EDO TABLE OF CONTENTS 1. Description.............................................................................................3 2. Features.................................................................................................3 3. Product Family........................................................................................3 4. Pin Configuration....................................................................................4 5. Block Diagram........................................................................................5 6. Electrical Characteristics....................................................................... Characteristics................................................................................. Characteristics.................................................................................8~11 9. DRAM AC ...
Page 3
... Dynamic RAM : Fast Page Mode with EDO 1. DESCRIPTION The NT511740C5J is a 4,194,304-word x 4-bit dynamic RAM fabricated in NTC’s CMOS silicon gate technology. The NT511740C5J achieves high integration , high-speed operation , and low- power consumption due to quadruple polysilicon double metal CMOS. The NT511740C5J is available in a 26/24-pin plastic SOJ ...
Page 4
NT5117405J 4,194,304-word X 4-bit Dynamic RAM : Fast Page Mode with EDO ...
Page 5
NT5117405J 4,194,304-word X 4-bit Dynamic RAM : Fast Page Mode with EDO 5. BLOCK DIAGRAM Address Buffer Internal Address Counter Address Decoders ...
Page 6
NT5117405J 4,194,304-word X 4-bit Dynamic RAM : Fast Page Mode with EDO 6. ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings Parameter Voltage on Any Pin Relative to V Voltage on V Supply Relative Short Circuit Output Cuttent Po/WEr Dissipation ...
Page 7
NT5117405J 4,194,304-word X 4-bit Dynamic RAM : Fast Page Mode with EDO 7. DC Characteristics Parameter Symbol Output High Voltage V OH Output LOW Voltage V OL Input Leakage Current I L1 Output Leakage I L0 Current Average Power Supply ...
Page 8
... REF 10,000 60 10,000 /RAS t 50 100,000 60 100,000 70 /RASP reserves the right to change products and specifications without notice Note:1,2,3,12,13 NT511740C5J- 70 Unit Note Max. - 124 - ns - 160 - 4 ...
Page 9
... ASC CAH RAL RCS RCH RRH WCS 9 reserves the right to change products and specifications without notice. NT511740C5J- 70 Unit Note Min. Max 10,000 ...
Page 10
... Hold Time (/CAS before /RAS) /WE to /RAS Precharge Time (/CAS before /RAS) /WE Hold Time /RAS (/CAS before /RAS) /RAS to /WE Set-up Time (Test Mode) /RAS to /WE Hold Time (Test Mode (Vcc=5V +/-10% ,Ta Note 1,2,3,12,13 NT511740C5J- NT511740C5J- NT511740A5J Symbol Min. Max. Min. Max. Min. 7 ...
Page 11
NT5117405J 4,194,304-word X Dynamic RAM : Fast Page Mode with EDO Notes start-up delay of 200 µ required after po/WEr-up,follo/WEd by a minimum of eight initialization cycles (/RAS-only refresh or /CAS before /RAS refresh) before proper ...
Page 12
NT5117405J 4,194,304-word X 4-bit Dynamic RAM : Fast Page Mode with EDO 9.DRAM AC Timing Waveforms Read Cycle Address Write Cycle(Early Write ...
Page 13
NT5117405J 4,194,304-word X 4-bit Dynamic RAM : Fast Page Mode with EDO Read Modify Write Cycle Address "H" or "L" 13 reserves the right to change products and ...
Page 14
NT5117405J 4,194,304-word X 4-bit Dynamic RAM : Fast Page Mode with EDO Fast Page Mode Read Cycle (Part- Address Fast Page Mode Read Cycle(Part- ...
Page 15
NT5117405J 4,194,304-word X 4-bit Dynamic RAM : Fast Page Mode with EDO Fast page Mode Write Cycle(Early Write Address Fast Page Mode Read Modify Write Cycle R A ...
Page 16
NT5117405J 4,194,304-word X 4-bit Dynamic RAM : Fast Page Mode with EDO RAS-only Refresh Cycle Address D Q CAS before RAS Refresh Cycle Note:WE,OE="H" ...
Page 17
NT5117405J 4,194,304-word X 4-bit Dynamic RAM : Fast Page Mode with EDO Hidden Refresh Read Cycle Address Hidden Refresh Write Cycle Address ...
Page 18
NT5117405J 4,194,304-word X 4-bit Dynamic RAM : Fast Page Mode with EDO Test Mode Initiate Cycle Note:OE,Address="H" or "L" 18 "H" or "L" reserves the right to change products and ...