NT511740C5J Nanya Technology, NT511740C5J Datasheet - Page 3

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NT511740C5J

Manufacturer Part Number
NT511740C5J
Description
Fast Page Mode with EDO DRAM
Manufacturer
Nanya Technology
Datasheet
2. FEATURES
l 4,194,304-word x 4-bit configuration
l Single 5V power supply,+/-10% tolerance
l Input
l Output :TTL compatible , 3-state
l Refresh :2048 cycles/32 ms
l Fast page mode with EDO, read modify write capability
l /CAS before /RAS refresh, hidden refresh, /RAS-only refresh capability
l Multi-bit test mode capability
l Package options:
NT5117405J
4,194,304-word
Dynamic RAM : Fast Page Mode with EDO
1.
The NT511740C5J is a 4,194,304-word x 4-bit dynamic RAM fabricated in NTC’s CMOS silicon
gate technology. The NT511740C5J achieves high integration , high-speed operation , and low-
power consumption due to quadruple polysilicon double metal CMOS. The NT511740C5J is
available in a 26/24-pin plastic SOJ.
NT511740C5J-50
NT511740C5J-60
NT511740C5J-70
DESCRIPTION
3. PRO D UCT FAM ILY
26/24-Pin 300 mil plastic SOJ (SOJ26/24-P300)
Fam ily
:TTL compatible , low input capacitance
50ns 25ns
60 ns 30 ns 15 ns 15 ns
70 ns 35 ns 20 ns 20 ns
t
RA C
X
Access Tim e (M ax.)
t
A A
4-bit
13ns
t
CA C
13ns
t
O EA
C ycle Time
3
104 ns
124 ns
(M in.)
84ns
XX indicates speed rank.
(Product:NT511740C5J-XX)
Operation(M ax.) Standby(M ax.)
550 m W
660m W
605m W
reserves the right to change products and specifications without notice.
Power Dissipation
©
5.5 m W

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