M12L16161A-5T ESMT [Elite Semiconductor Memory Technology Inc.], M12L16161A-5T Datasheet - Page 19

• Manufacturer Part Number: M12L16161A-5T
• Description: 512K x 16Bit x 2Banks Synchronous DRAM
• Manufacturer: ESMT [Elite Semiconductor Memory Technology Inc.]

Read & Write Cycle with auto Precharge @ Burst Length =4
*Note: 1.
Elite Semiconductor Memory Technology Inc.
DQ
A 1 0 / A P
C L O C K
A D D R
C L = 3
C L = 2
D Q M
C K E
R A S
C A S
W E
C S
B A
(In the case of Burst Length=1 & 2 and BRSW mode)
t
CDL
0
( A - Bank )
Row Active
Should be controlled to meet minimum
R a
R a
1
2
3
( B - Bank )
Row Active
R b
R b
4
Auto Precharge
( A - Bank )
Read with
C a
5
6
Q a 0
7
Q a 0
t
Q a 1 Q a 2
RAS
Auto Precharge
Start Point
( A - Bank)
8
CL= 2
before internal precharge start
Q a 1
9
H I G H
Auto Precharge
( A - Bank)
Start Point
Q a 3
Q a 2
CL= 3
P.19
10
Q a 3
11
12
A u t o P r e c h a r g e
13
W r i t e w i t h
( B - B a n k )
D b 0
D b 0
C b
14
Publication Date : Jan. 2000
D b 1
D b 1
15
D b 2
D b 2
16
M12L16161A
D b 3
D b 3
17
Revision : 1.3u
: D o n ' t C a r e
A u t o P r e c h a r g e
18
S t a r t P o i n t
( B - B a n k )
19