M12L16161A-5T ESMT [Elite Semiconductor Memory Technology Inc.], M12L16161A-5T Datasheet - Page 4

• Manufacturer Part Number: M12L16161A-5T
• Description: 512K x 16Bit x 2Banks Synchronous DRAM
• Manufacturer: ESMT [Elite Semiconductor Memory Technology Inc.]

DC CHARACTERISTICS
(Recommended operating condition unless otherwise noted, T
Note: 1.Measured with outputs open. Addresses are changed only one time during
Elite Semiconductor Memory Technology Inc.
Operating Current
(One Bank Active)
Precharge Standby
Current in power-down
mode
Precharge Standby
Current in non power-
down mode
Active Standby Current
in power-down mode
Active Standby Current
in non power-down
mode
(One Bank Active)
Operating Current
(Burst Mode)
Refresh Current
Self Refresh Current
2.Refresh period is 32ms. Addresses are changed only one time during
Parameter
Symbol
I
I
I
I
I
I
I
I
I
I
I
I
CC1
CC2
CC2
CC2
CC2
CC3
CC3
CC3
CC3
CC
CC
CC
4
5
6
P
PS
N
NS
P
PS
N
NS CKE V
Burst Length = 1
t
CKE V
CKE V
CKE V
Input signals are changed one time during 30ns
CKE V
Input signals are stable
CKE V
CKE
CKE V
Input signals are changed one time during 30ns
Input signals are stable
I
All Band Activated,
(min)
t
CKE 0.2V
OL
RC
RC
= 0Ma, Page Burst
t
t
RC
RC
IL
IL
IH
IH
IL
IH
IH
V
(min)
Test Condition
(min),
(max),
(max), CLK V
(max),
IL
(min), CS
(min), CLK V
(min), CS
(min), CLK V
(max), CLK
t
t
t
CC
CC
CC
=15ns
=15ns
A
t
t
CC
V
CCD
V
= 0 to 70
IH
IL
IL
IH
IL
V
(min), I
(min),
(max),
P.4
(max),
(min),
(max),
IL
=
(max),
t
CCD
t
OL
t
t
t
CC
C
t
CC
CC
CC
CC
= 0mA
t
t
Latency -4.3 -5 -5.5 -6 -7
V
=15ns
CC
=15ns
CC
=
=
=
CAS
IH
(min).
=
(min)/V
3
2
t
CC
(min).
250 230 210 190 160 140 mA
270 250 230 210 180 160 mA
270 250 230 210 180 160
270 250 230 210 180 160 mA
Publication Date : Jan. 2000
IL
(max)=2.0V/0.8V)
Version
30
10
10
40
10
1
2
2
2
M12L16161A
Revision : 1.3u
-8
Unit Note
mA
mA
mA
mA
mA
mA
mA
1
2
1