BFG540/X PHILIPS [NXP Semiconductors], BFG540/X Datasheet - Page 6

• Manufacturer Part Number: BFG540/X
• Description: NPN 9 GHz wideband transistor
• Manufacturer: PHILIPS [NXP Semiconductors]

Philips Semiconductors
2000 May 23
handbook, halfpage
handbook, halfpage
NPN 9 GHz wideband transistor
V
MSG = maximum stable gain; G
G
I
G
MSG = maximum stable gain; G
C
CE
UM
UM
= 10 mA; V
gain
(dB)
gain
(dB)
= 8 V; f = 900 MHz.
Fig.7 Gain as a function of collector current.
25
20
15
10
= maximum unilateral power gain.
50
40
30
20
10
= maximum unilateral power gain;
5
0
0
10
0
Fig.9 Gain as a function of frequency.
G UM
MSG
MSG
CE
= 8 V.
10
20
2
max
max
= maximum available gain;
= maximum available gain.
10
40
3
I C (mA)
f (MHz)
G max
G max
G UM
MRA752
MRA754
10
60
4
6
handbook, halfpage
handbook, halfpage
V
G
G
I
G
MSG = maximum stable gain; G
C
CE
max
UM
UM
= 40 mA; V
gain
(dB)
gain
(dB)
Fig.8 Gain as a function of collector current.
= 8 V; f = 2 GHz.
25
20
15
10
= maximum unilateral power gain.
50
40
30
20
10
= maximum unilateral power gain;
= maximum available gain;
5
0
0
10
Fig.10 Gain as a function of frequency.
0
G UM
MSG
CE
= 8 V.
10
20
2
BFG540; BFG540/X;
max
= maximum available gain.
10
40
3
Product specification
BFG540/XR
I C (mA)
f (MHz)
G max
G max
G UM
MRA753
MRA755
10
60
4