BSS159NL6327HTSA1 Infineon, BSS159NL6327HTSA1 Datasheet - Page 7

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BSS159NL6327HTSA1

Manufacturer Part Number
BSS159NL6327HTSA1
Description
Mosfet n-Ch 60v 230ma Sot-23
Manufacturer
Infineon
Datasheet
Rev. 1.32
13 Forward characteristics of reverse diode
I
parameter: T
16 Drain-source breakdown voltage
V
F
=f(V
BR(DSS)
0.001
0.01
0.1
70
50
SD
1
-60
=f(T
)
0
j
); I
j
-20
D
=250 µA
0.4
150 °C
20
V
T
SD
j
60
[°C]
0.8
[V]
25 °C
100
150 °C, 98%
25 °C, 98%
1.2
140
180
page 7
15 Typ. gate charge
V
parameter: V
GS
=f(Q
-1
-2
-3
-4
6
5
4
3
2
1
0
0
gate
); I
DD
D
=0.16 A pulsed
Q
0.2 VDS(max)
gate
1
[nC]
0.5 VDS(max)
0.8 VDS(max)
BSS159N
2006-12-11
2

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