LPC1114FHI33/303,5 NXP Semiconductors, LPC1114FHI33/303,5 Datasheet - Page 79
LPC1114FHI33/303,5
Manufacturer Part Number
LPC1114FHI33/303,5
Description
ARM Microcontrollers - MCU Cortex-M0 32 kB Fl 8 kB SRAM
Manufacturer
NXP Semiconductors
Datasheet
1.LPC1114FN2810212.pdf
(114 pages)
Specifications of LPC1114FHI33/303,5
Rohs
yes
Core
ARM Cortex M0
Processor Series
LPC1114
Data Bus Width
32 bit
Maximum Clock Frequency
50 MHz
Program Memory Size
32 KB
Data Ram Size
8 KB
On-chip Adc
Yes
Operating Supply Voltage
1.8 V to 3.6 V
Operating Temperature Range
- 65 C to + 150 C
Package / Case
HVQFN-33
Mounting Style
SMD/SMT
Factory Pack Quantity
490
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10. Dynamic characteristics
LPC111X
Product data sheet
10.1 Power-up ramp conditions
10.2 Flash memory
Table 18.
T
[1]
[2]
Table 19.
T
[1]
[2]
Symbol Parameter
t
Symbol
N
t
t
t
t
V
r
wait
ret
er
prog
amb
amb
Fig 39. Power-up ramp
I
endu
See
The wait time specifies the time the power supply must be at levels below 400 mV before ramping up.
Number of program/erase cycles.
Programming times are given for writing 256 bytes from RAM to the flash. Data must be written to the flash
in blocks of 256 bytes.
= 40 C to +85 C.
= 40 C to +85 C, unless otherwise specified.
Figure
Condition: 0 < V
rise time
wait time
input voltage
Power-up characteristics
Flash characteristics
Parameter
endurance
retention time
erase time
programming
time
39.
All information provided in this document is subject to legal disclaimers.
Rev. 8 — 20 February 2013
I
400 mV at start of power-up (t = t
400 mV
Conditions
at t = t
at t = t
V
DD
0
Conditions
powered
unpowered
sector or multiple
consecutive
sectors
1
1
: 0 < V
on pin V
I
400 mV
DD
LPC1110/11/12/13/14/15
t = t
1
32-bit ARM Cortex-M0 microcontroller
[1]
[2]
1
)
Min
10000
10
20
95
0.95
t
wait
[1][2]
t
r
[1]
002aag001
Min
0
12
0
Typ
100000
-
-
100
1
Typ
-
-
-
© NXP B.V. 2013. All rights reserved.
Max
500
-
400
Max
-
-
-
105
1.05
79 of 114
Unit
ms
s
mV
Unit
cycles
years
years
ms
ms
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