M24C04-FMC5TG STMicroelectronics, M24C04-FMC5TG Datasheet - Page 21

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M24C04-FMC5TG

Manufacturer Part Number
M24C04-FMC5TG
Description
EEPROM 4Kbit 100kHz I2C 400 kHZ Fast-Mode
Manufacturer
STMicroelectronics
Datasheet

Specifications of M24C04-FMC5TG

Product Category
EEPROM
Rohs
yes

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M24C04-W M24C04-R M24C04-F
Table 9.
1. Characterized only, not tested in production.
Table 10.
1. The data retention behavior is checked in production. The -year limit is defined from characterization and
Table 11.
1. 2 mA for devices identified by process letter G or S.
2. The device is not selected after power-up, after a Read instruction (after the Stop condition), or after the
3. 1 µA for previous devices identified by process letters G or S.
Data retention
Symbol
Symbol
I
V
I
V
I
CC1
V
qualification results.
completion of the internal write cycle t
I
CC
LO
LI
OL
IH
IL
C
C
Z
Z
IN
IN
H
L
Input leakage current
(SCL, SDA, E2, E1)
Output leakage
current
Supply current (Read)
Standby supply
current
Input low voltage
(SCL, SDA, WC)
Input high voltage
(SCL, SDA, WC)
Output low voltage
Input capacitance (SDA)
Input capacitance (other pins)
Input impedance (WC)
Input parameters
Memory cell data retention
DC characteristics (M24C04-W, device grade 6)
(1)
Parameter
Parameter
Parameter
Doc ID 023994 Rev 2
V
mode
SDA in Hi-Z, external voltage applied
on SDA: V
V
V
Device not selected
V
Device not selected
V
I
I
Test conditions (in addition to those
OL
OL
IN
CC
CC
CC
CC
W
= 2.1 mA, V
= 3 mA, V
= V
, V
, V
= 5.5 V, f
= 2.5 V, f
(t
(1)
W
CC
CC
SS
in
is triggered by the correct decoding of a Write instruction).
= 2.5 V
= 5.5 V
or V
Table 5
SS
TA = 55 °C
or V
c
c
CC
CC
= 400 kHz
= 400 kHz
CC
Test condition
, device in Standby
= 5.5 V
CC
and
= 2.5 V or
(2)
(2)
, V
, V
Table
IN
IN
Test condition
= V
= V
V
V
IN
IN
8)
SS
SS
< 0.3 V
> 0.7 V
or
or
-
-
CC
CC
DC and AC parameters
0.7 V
–0.45
Min.
Min.
40
-
-
-
-
-
-
-
Min.
500
CC
15
-
-
0.3 V
V
Max.
Max.
CC
1
2
3
± 2
± 2
0.4
70
1
(1)
(3)
(3)
8
6
-
+1
CC
Year
Unit
Unit
21/32
Unit
pF
pF
k
k
mA
mA
µA
µA
µA
µA
V
V
V

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