iCE40LP1K-CM121 Lattice, iCE40LP1K-CM121 Datasheet - Page 20

• Manufacturer Part Number: iCE40LP1K-CM121
• Description: FPGA - Field Programmable Gate Array iCE40LP 1280 LUTs, 1.2V Ultra Low-Power
• Manufacturer: Lattice

Specifications of iCE40LP1K-CM121

• Rohs: yes
• Number Of Gates: 1280
• Number Of Logic Blocks: 16
• Number Of I/os: 95
• Maximum Operating Frequency: 533 MHz
• Operating Supply Voltage: 1.2 V
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• Package / Case: CBGA-121
• Distributed Ram: 64 Kbit
• Minimum Operating Temperature: - 40 C
• Factory Pack Quantity: 490

sysIO Recommended Operating Conditions
sysIO Single-Ended DC Electrical Characteristics
sysIO Differential Electrical Characteristics
The LVDS25E/subLVDSE differential output buffers are available on all banks but the LVDS/subLVDS input buffers
are only available on Bank 3 of iCE40 devices.
LVDS25
subLVDS
V
V
V
I
1. Typical.
V
V
V
I
1. Typical.
LVCMOS 3.3
LVCMOS 2.5
LVCMOS 1.8
1. Some products are clamped to a diode when V
IN
IN
Parameter
Parameter
INP,
THD
CM
INP,
THD
CM
Standard
Symbol
Symbol
Output
Input/
V
V
INM
INM
LVCMOS 3.3
LVCMOS 2.5
LVCMOS 1.8
LVDS25E
subLVDSE
1. Inputs on-chip. Outputs are implemented with the addition of external resistors.
Input Voltage
Differential Input Threshold
Input Common Mode Voltage
Input Current
Input Voltage
Differential Input Threshold
Input Common Mode Voltage
Input Current
Min. (V)
Parameter Description
Parameter Description
-0.3
-0.3
-0.3
1
1
V
Standard
IL
0.35V
Max. (V)
0.8
0.7
Over Recommended Operating Conditions
Over Recommended Operating Conditions
CCIO
IN
0.65V
is larger then V
Min. (V)
V
V
Power on
V
V
Power on
2.0
1.7
CCIO
CCIO
CCIO
CCIO
Test Conditions
Test Conditions
CCIO
1
1
1
1
= 2.5
= 2.5
= 1.8
= 1.8
V
IH
V
V
V
CCIO.
1
3-7
CCIO
CCIO
CCIO
Min.
Max. (V)
3.14
2.37
1.71
2.37
1.71
+ 0.2V
+ 0.2V
+ 0.2V
(V
(V
CCIO
CCIO
V
OL
Min.
Min.
250
100
DC and Switching Characteristics
—
/2) - 0.25 V
—
V
0
0
(V)
0.4
0.2
0.4
0.2
0.4
0.2
/2) - 0.3
CCIO
Max.
iCE40 LP/HX Family Data Sheet
Typ.
3.3
2.5
1.8
2.5
1.8
(V)
V
V
V
V
V
V
V
V
CCIO
CCIO
CCIO
CCIO
CCIO
CCIO
CCIO
CCIO
OH
Typ.
Typ.
350
150
—
—
—
—
(V)
Min.
- 0.5
- 0.2
- 0.5
- 0.2
- 0.4
- 0.2
/2 (V
/2 (V
Max.
3.46
2.62
1.89
2.62
1.89
CCIO
CCIO
I
OL
Max.
Max.
±10
±10
450
200
(mA)
2.5
1.8
/2) + 0.25
/2) + 0.3
0.1
0.1
0.1
Max.
8
6
4
I
OH
(mA)
-0.1
-0.1
-0.1
Units
Units
-8
-6
-4
Max.
mV
mV
µA
µA
V
V
V
V