74AUP2G126GN,115 NXP Semiconductors, 74AUP2G126GN,115 Datasheet

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74AUP2G126GN,115

Manufacturer Part Number
74AUP2G126GN,115
Description
Buffers & Line Drivers Low-Power dual buffer/line driver
Manufacturer
NXP Semiconductors
Datasheet

Specifications of 74AUP2G126GN,115

Rohs
yes
Factory Pack Quantity
5000
1. General description
2. Features and benefits
The 74AUP2G126 provides the dual non-inverting buffer/line driver with 3-state output.
The 3-state output is controlled by the output enable input (nOE). A LOW level at pin nOE
causes the output to assume a high-impedance OFF-state. This device has the
input-disable feature, which allows floating input signals. The inputs are disabled when the
output enable input nOE is LOW.
Schmitt trigger action at all inputs makes the circuit tolerant to slower input rise and fall
times across the entire V
static and dynamic power consumption across the entire V
This device is fully specified for partial power-down applications using I
circuitry disables the output, preventing a damaging backflow current through the device
when it is powered down.
74AUP2G126
Low-power dual buffer/line driver; 3-state
Rev. 9 — 11 February 2013
Wide supply voltage range from 0.8 V to 3.6 V
High noise immunity
Complies with JEDEC standards:
ESD protection:
Low static power consumption; I
Latch-up performance exceeds 100 mA per JESD78 Class II
Inputs accept voltages up to 3.6 V
Low noise overshoot and undershoot < 10 % of V
Input-disable feature allows floating input conditions
I
Multiple package options
Specified from 40 C to +85 C and 40 C to +125 C
OFF
JESD8-12 (0.8 V to 1.3 V)
JESD8-11 (0.9 V to 1.65 V)
JESD8-7 (1.2 V to 1.95 V)
JESD8-5 (1.8 V to 2.7 V)
JESD8-B (2.7 V to 3.6 V)
HBM JESD22-A114F Class 3A exceeds 5000 V
MM JESD22-A115-A exceeds 200 V
CDM JESD22-C101E exceeds 1000 V
circuitry provides partial Power-down mode operation
CC
range from 0.8 V to 3.6 V. This device ensures a very low
CC
= 0.9 A (maximum)
CC
CC
range from 0.8 V to 3.6 V.
Product data sheet
OFF
. The I
OFF

Related parts for 74AUP2G126GN,115

74AUP2G126GN,115 Summary of contents

Page 1

Low-power dual buffer/line driver; 3-state Rev. 9 — 11 February 2013 1. General description The 74AUP2G126 provides the dual non-inverting buffer/line driver with 3-state output. The 3-state output is controlled by the output enable input (nOE). A LOW level ...

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... NXP Semiconductors 3. Ordering information Table 1. Ordering information Type number Package Temperature range Name 40 C to +125 C 74AUP2G126DC 40 C to +125 C 74AUP2G126GT 40 C to +125 C 74AUP2G126GF 40 C to +125 C 74AUP2G126GD 40 C to +125 C 74AUP2G126GM 40 C to +125 C 74AUP2G126GN  ...

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... NXP Semiconductors 6. Pinning information 6.1 Pinning 74AUP2G126 1OE GND 001aae997 Fig 3. Pin configuration SOT765-1 74AUP2G126 1OE GND 4 Transparent top view Fig 5. Pin configuration SOT996-2 6.2 Pin description Table 3. Pin description Symbol Pin SOT765-1, SOT833-1, SOT1089, SOT996-2, SOT1116 and SOT1203 ...

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... NXP Semiconductors 7. Functional description [1] Table 4. Function table Input nOE [ HIGH voltage level LOW voltage level don’t care high-impedance OFF-state. 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V). ...

Page 5

... NXP Semiconductors 10. Static characteristics Table 7. Static characteristics At recommended operating conditions; voltages are referenced to GND (ground = 0 V). Symbol Parameter = 25 C T amb V HIGH-level input voltage IH V LOW-level input voltage IL V HIGH-level output voltage OH V LOW-level output voltage OL I input leakage current I I OFF-state output current ...

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... NXP Semiconductors Table 7. Static characteristics At recommended operating conditions; voltages are referenced to GND (ground = 0 V). Symbol Parameter I additional supply current CC C input capacitance I C output capacitance O = 40 C to +85 C T amb V HIGH-level input voltage IH V LOW-level input voltage IL V HIGH-level output voltage ...

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... NXP Semiconductors Table 7. Static characteristics At recommended operating conditions; voltages are referenced to GND (ground = 0 V). Symbol Parameter I additional power-off OFF leakage current I supply current CC I additional supply current CC = 40 C to +125 C T amb V HIGH-level input voltage IH V LOW-level input voltage IL V HIGH-level output voltage ...

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... NXP Semiconductors Table 7. Static characteristics At recommended operating conditions; voltages are referenced to GND (ground = 0 V). Symbol Parameter I additional power-off OFF leakage current I supply current CC I additional supply current CC  0.6 V, other input at V [1] One input [2] To show I remains very low when the input-disable feature is enabled. ...

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... NXP Semiconductors Table 8. Dynamic characteristics Voltages are referenced to GND (ground = 0 V); for test circuit see Symbol Parameter Conditions propagation delay nA to nY; see pd t enable time nOE to nY; see en t disable time nOE to nY; see dis propagation delay nA to nY; see ...

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... NXP Semiconductors Table 8. Dynamic characteristics Voltages are referenced to GND (ground = 0 V); for test circuit see Symbol Parameter Conditions t disable time nOE to nY; see dis propagation delay nA to nY; see pd t enable time nOE to nY; see en t disable time nOE to nY; see ...

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... NXP Semiconductors Table 8. Dynamic characteristics Voltages are referenced to GND (ground = 0 V); for test circuit see Symbol Parameter Conditions pF and power dissipation output enabled capacitance V I [1] All typical values are measured at nominal V [ the same as t and t ...

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... NXP Semiconductors nOE input output LOW-to-OFF OFF-to-LOW output HIGH-to-OFF OFF-to-HIGH Measurement points are given in Logic levels: V and Fig 8. Enable and disable times Table 10. Measurement points Supply voltage Input 0.5  1.6 V 0.5  2.7 V 0.5  ...

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... NXP Semiconductors Test data is given in Table Definitions for test circuit Load resistance Load capacitance including jig and probe capacitance Termination resistance should be equal to the output impedance External voltage for measuring switching times. EXT Fig 9. Test circuit for measuring switching times Table 11 ...

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... NXP Semiconductors 13. Package outline VSSOP8: plastic very thin shrink small outline package; 8 leads; body width 2 pin 1 index 1 e DIMENSIONS (mm are the original dimensions UNIT max. 0.15 0. 0.12 0.00 0.60 Notes 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. ...

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... NXP Semiconductors XSON8: plastic extremely thin small outline package; no leads; 8 terminals; body 1 x 1. 8× (2) terminal 1 index area DIMENSIONS (mm are the original dimensions) ( UNIT b D max max 0.25 2.0 mm 0.5 0.04 0.17 1.9 Notes 1. Including plating thickness. 2. Can be visible in some manufacturing processes. ...

Page 16

... NXP Semiconductors XSON8: extremely thin small outline package; no leads; 8 terminals; body 1. 0.5 mm terminal 1 index area (2) (4× terminal 1 index area Dimensions (1) Unit max 0.5 0.04 0.20 1.40 mm nom 0.15 1.35 min 0.12 1.30 Note 1. Including plating thickness. 2. Visible depending upon used manufacturing technology. Outline version ...

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... NXP Semiconductors XSON8: plastic extremely thin small outline package; no leads; 8 terminals; body 0.5 mm terminal 1 index area Dimensions (mm are the original dimensions) (1) Unit max 0.05 0.35 2.1 mm nom 0.5 min 0.00 0.15 1.9 Outline version IEC SOT996-2 Fig 13. Package outline SOT996-2 (XSON8) 74AUP2G126 Product data sheet ...

Page 18

... NXP Semiconductors XQFN8: plastic, extremely thin quad flat package; no leads; 8 terminals; body 1.6 x 1 terminal 1 index area terminal 1 index area L 1 Dimensions (1) Unit max 0.5 0.05 0.25 1.65 mm nom 0.20 1.60 min 0.00 0.15 1.55 Note 1. Plastic or metal protrusions of 0.075 mm maximum per side are not included. Outline ...

Page 19

... NXP Semiconductors XSON8: extremely thin small outline package; no leads; 8 terminals; body 1.2 x 1 (2) (8×) terminal 1 index area Dimensions (1) Unit max 0.35 0.04 0.20 1.25 mm nom 0.15 1.20 min 0.12 1.15 Note 1. Including plating thickness. 2. Visible depending upon used manufacturing technology. Outline version IEC SOT1116 Fig 15. Package outline SOT1116 (XSON8) ...

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... NXP Semiconductors XSON8: extremely thin small outline package; no leads; 8 terminals; body 1.35 x 1 (2) (8×) terminal 1 index area Dimensions (1) Unit max 0.35 0.04 0.20 1.40 mm nom 0.15 1.35 min 0.12 1.30 Note 1. Including plating thickness. 2. Visible depending upon used manufacturing technology. Outline version IEC SOT1203 Fig 16. Package outline SOT1203 (XSON8) ...

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... NXP Semiconductors 14. Abbreviations Table 12. Abbreviations Acronym Description CDM Charged Device Model CMOS Complementary Metal-Oxide Semiconductor DUT Device Under Test ESD ElectroStatic Discharge HBM Human Body Model MM Machine Model TTL Transistor-Transistor Logic 15. Revision history Table 13. Revision history Document ID Release date 74AUP2G126 v.9 20130211 • ...

Page 22

... Terms and conditions of commercial sale of NXP Semiconductors. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice ...

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... Product data sheet NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ ...

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... NXP Semiconductors 18. Contents 1 General description . . . . . . . . . . . . . . . . . . . . . . 1 2 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 Functional diagram . . . . . . . . . . . . . . . . . . . . . . 2 6 Pinning information . . . . . . . . . . . . . . . . . . . . . . 3 6.1 Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 6.2 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 3 7 Functional description . . . . . . . . . . . . . . . . . . . 4 8 Limiting values Recommended operating conditions Static characteristics Dynamic characteristics . . . . . . . . . . . . . . . . . . 8 12 Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 13 Package outline ...

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