UBA2017P/1,112 NXP Semiconductors, UBA2017P/1,112 Datasheet - Page 20

• Manufacturer Part Number: UBA2017P/1,112
• Description: Display Drivers & Controllers SMPS CTRLR 12.4V
• Manufacturer: NXP Semiconductors

Specifications of UBA2017P/1,112

• Rohs: yes
• Operating Supply Voltage: 12.4 V
• Mounting Style: Through Hole
• Package / Case: DIP-16
• Maximum Output Current: 105 mA
• Product: Fluorescent Lamp Driver
• Factory Pack Quantity: 25
• Supply Current: 2.2 mA

NXP Semiconductors
T
UBA2017
Product data sheet
Table 6.
unless otherwise specified.
Symbol
f
HB lamp ignition
f
V
V
V
V
t
HB normal operation
f
V
V
I
V
R
V
V
g
I
HB driver
I
R
I
R
t
V
sw(ph)
sw(high)
d(lod)
sw(low)
ch(low)(CF)
O(clamp)(PH/EN)
source(GLHB)
source(GHHB)
no
amb
m(IFB)
fsw(low)(CIFB)
th(lod)(IFB)
th(lod)(VFB)
(Vreg−Vth(lod))
high(CF)
reg(IFB)
i(IFB)
en(PH/EN)
O(burn)(PH/EN)
Fd(bs)
i(IFB)
sink(GLHB)
sink(GHHB)
= 25 °C; settings according to default setting
/f
sw(low)
Characteristics
Parameter
preheat switching frequency
high switching frequency to low
switching frequency ratio
low switching frequency voltage on pin
CIFB
lamp on detection threshold voltage on
pin IFB
lamp on detection threshold voltage on
pin VFB
regulation voltage to lamp-on-detect
threshold voltage difference
lamp on detection delay time
low switching frequency
high voltage on pin CF
regulation voltage on pin IFB
low charge current on pin CF
input voltage on pin IFB
input resistance on pin IFB
enable voltage on pin PH/EN
burn state output voltage on pin PH/EN
IFB transconductance
output current clamp on pin PH/EN
source current on pin GLHB
sink resistance on pin GLHB
source current on pin GHHB
sink resistance on pin GHHB
non-overlap time
bootstrap diode forward voltage
…continued
All information provided in this document is subject to legal disclaimers.
[1]
; all voltages referenced to GND; current flow into the IC is positive;
Rev. 2 — 15 May 2012
600 V fluorescent lamp driver with linear dimming function
Conditions
R
C
R
C
pin IFB
C
V
V
V
V
V
V
V
V
V
Burn state
V
Preheat, Ignition or Burn
states; V
V
V
V
V
I
FS
CIFB
CIFB
IFB
CIFB
CIFB
IFB
CIFB
IFB
IFB
CIFB
GLHB
GLHB
SHHB
SHHB
ext(PH/EN)
ext(CF)
ext(PH/EN)
ext(CF)
CF
= 5 mA
= 200 pF
> 0 V
< 0 V
= 1 V
= −1 V
= 2 V; V
= 2 V; V
= 2 V; V
= 2 V; V
= 2 V
= 2 V
= 4 V
= 2 V
= 0 V; V
= 0 V; V
= 200 pF
= 200 pF
PH/EN
= 40 kΩ;
= 100 kΩ;
IFB
DIM
IFB
DIM
= 0.2 V
UBA2017/UBA2017A
GHHB
GHHB
> 0 V
< 0 V
= 127 mV;
= 127 mV;
= 4 V
= 2 V
Min
93
62
2.2
-
1
0.9
40
2
41
20
-
1.22
77
−1.34 −1.27 −1.2
−197 −127
-
−3.1
-
-
0.21
1.21
14
-
−105 −90
13.5
−105 −90
13.5
1.25
1.0
Typ
97.7
66
3.0
1.11
160
3
43
-
1.27
127
47
-
60
30
0.25
1.27
-
16
16
1.5
2.4
1.0
2.5
16.5
1.5
© NXP B.V. 2012. All rights reserved.
Max
102.4 kHz
70
2.6
-
1.22
1.1
250
4
45
80
-
1.32
177
−57
-
+3.1
-
-
0.29
1.33
19
0.16
−75
18.5
−75
18.5
1.75
2.0
20 of 29
Unit
kHz
V
V
V
mV
ms
kHz
kHz
V
V
mV
V
mV
μA
V
kΩ
kΩ
V
V
μA/V
mA
mA
Ω
mA
Ω
μs
V