VND5E008AY-E STMicroelectronics, VND5E008AY-E Datasheet - Page 12
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VND5E008AY-E
Manufacturer Part Number
VND5E008AY-E
Description
Power Switch ICs - Power Distribution Double Ch High Side 41V 8mOhm 76A 2uA
Manufacturer
STMicroelectronics
Datasheet
1.VND5E008AYTR-E.pdf
(39 pages)
Specifications of VND5E008AY-E
Product Category
Power Switch ICs - Power Distribution
Rohs
yes
Electrical specifications
12/39
Table 9.
1. To ensure long term reliability under heavy overload or short circuit conditions, protection and related
Table 10.
Figure 4.
V
Symbol
Symbol
V
V
V
V
CSD(hyst)
V
T
I
I
DEMAG
CSDH
V
V
CSDL
diagnostic signals must be used together with a proper software strategy. If the device is subjected to
abnormal conditions, this software must limit the duration and number of activation cycles.
CSDH
HYST
I(hyst)
V
CSDL
CSCL
V
I
I
ON
ICL
IH
IL
IH
IL
Thermal hysteresis
(T
Turn-off output voltage
clamp
Output voltage drop
limitation
Input low level voltage
Low level input current
Input high level voltage
High level input current
Input hysteresis voltage
Input clamp voltage
CS_DIS low level voltage
Low level CS_DIS current
CS_DIS high level voltage
High level CS_DIS current V
CS_DIS hysteresis voltage
CS_DIS clamp voltage
TSD
Protections
Logic input
Current sense delay characteristics
Parameter
- T
Parameter
R
)
(1)
(continued)
Doc ID 13620 Rev 3
I
I
(see
OUT
OUT
V
V
I
I
V
I
I
= 2 A; V
= 0.4 A; T
Figure
IN
IN
CSD
CSD
IN
IN
CSD
CSD
= 1 mA
= -1 mA
= 0.9 V
= 2.1 V
Test conditions
= 1 mA
= -1 mA
= 0.9 V
= 2.1 V
Test conditions
10)
IN
j
= 0; L = 6 mH
= -40 °C...150 °C
V
Min.
0.25
0.25
Min.
2.1
5.5
2.1
5.5
CC
1
1
-29 V
Typ.
-0.7
-0.7
Typ.
CC
25
7
VND5E008AY-E
-32 V
Max.
0.9
0.9
10
10
Max.
7
7
CC
-36
Unit
Unit
µA
µA
µA
µA
mV
V
V
V
V
V
V
V
V
V
V
°C
V