VND5E008AY-E STMicroelectronics, VND5E008AY-E Datasheet - Page 9

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VND5E008AY-E

Manufacturer Part Number
VND5E008AY-E
Description
Power Switch ICs - Power Distribution Double Ch High Side 41V 8mOhm 76A 2uA
Manufacturer
STMicroelectronics
Datasheet

Specifications of VND5E008AY-E

Product Category
Power Switch ICs - Power Distribution
Rohs
yes
VND5E008AY-E
2.3
Electrical characteristics
8 V < V
Table 5.
1. PowerMOS leakage included.
2. For each channel.
Table 6.
V
R
(dV
(dV
Symbol
V
USDhyst
V
ON REV
Symbol
I
R
V
L(off)
clamp
W
USD
OUT
OUT
t
t
W
I
CC
ON
S
d(on)
d(off)
OFF
ON
/dt)
/dt)
CC
on
off
Operating supply voltage
Undervoltage shutdown
Undervoltage shutdown
hysteresis
ON-state resistance
Reverse battery ON-state
resistance
Clamp Voltage
Supply current
Off-state output current
< 28 V; -40 °C < T
Turn-on delay time
Turn-off delay time
Turn-on voltage
slope
Turn-off voltage
slope
Switching energy
losses during t
Switching energy
losses during t
Power section
Switching (V
Parameter
Parameter
won
woff
CC
j
= 13V; T
< 150 °C, unless otherwise specified
Doc ID 13620 Rev 3
(2)
R
R
R
R
R
R
L
L
L
L
L
L
I
I
I
V
T
I
Off-state; V
V
On-state; V
I
V
T
V
T
= 2.2 Ω (see
= 2.2 Ω (see
= 2.2 Ω
= 2.2 Ω
= 2.2 Ω (see
= 2.2 Ω (see
OUT
OUT
OUT
S
OUT
j
j
j
CC
IN
IN
IN
= 25 °C
= 20 mA
= 25 °C
= 125 °C
= V
= V
= V
j
Test conditions
= -13 V; I
= 6 A; T
= 6 A; T
= 6 A; V
= 0 A
= 25°C)
OUT
OUT
OUT
Test conditions
CC
CC
= V
= 0 V; V
= 0 V; V
j
j
CC
Figure
Figure
Figure
Figure
OUT
= 25 °C
= 150 °C
= 13 V; T
= 13 V; V
SENSE
= 5 V; T
= -6 A;
CC
CC
8)
8)
8)
8)
= V
= 13 V;
= 13 V;
j
IN
j
= 25 °C;
= 25 °C
CSD
= 5 V;
= 0 V
Min.
Electrical specifications
Figure 23
Figure 24
Min. Typ. Max. Unit
4.5
41
0
Typ.
0.43
See
See
1.2
30
15
0.01
2
3.5
0.5
3.5
13
46
8
8
(1)
Max.
5
4.5
6.5
28
15
11
52
3
5
(1)
Unit
V/µs
V/µs
mJ
mJ
mA
µs
µs
µA
µA
µA
9/39
V
V
V
V

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