MCIMX6S4AVM08ABR Freescale Semiconductor, MCIMX6S4AVM08ABR Datasheet - Page 37

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MCIMX6S4AVM08ABR

Manufacturer Part Number
MCIMX6S4AVM08ABR
Description
Processors - Application Specialized i.MX6 Solo rev 1.1
Manufacturer
Freescale Semiconductor
Type
Multimedia Applicationsr
Datasheet

Specifications of MCIMX6S4AVM08ABR

Rohs
yes
Core
ARM Cortex A9
Processor Series
i.MX6
Data Bus Width
32 bit
Maximum Clock Frequency
800 MHz
Data Ram Size
16 KB
Operating Supply Voltage
1.175 V to 1.5 V
Maximum Operating Temperature
+ 125 C
Mounting Style
SMD/SMT
Package / Case
MAPBGA-624
Interface Type
Parallel
Memory Type
L1/L2 Cache, ROM, SRAM
Minimum Operating Temperature
- 40 C
Number Of Timers
2
4.6
This section includes the DC parameters of the following I/O types:
Freescale Semiconductor
Bias resistor
Cload
ESR
General Purpose I/O (GPIO)
Double Data Rate I/O (DDR) for LPDDR2 and DDR3 modes
LVDS I/O
MLB I/O
I/O DC Parameters
The term ‘OVDD’ in this section refers to the associated supply rail of an
input or output.
i.MX 6Solo/6DualLite Automotive and Infotainment Applications Processors, Rev. 1
Min
Figure 3. Circuit for Parameters Voh and Vol for I/O Cells
Table 23. OSC32K Main Characteristics
14 MΩ
50 kΩ
10 pF
Typ
Crystal Properties
NOTE
100 kΩ
Max
This the integrated bias resistor that sets the amplifier
into a high gain state. Any leakage through the ESD
network, external board leakage, or even a scope
probe that is significant relative to this value will
debias the amp. The debiasing will result in low gain,
and will impact the circuit's ability to start up and
maintain oscillations.
Usually crystals can be purchased tuned for different
Cloads. This Cload value is typically 1/2 of the
capacitances realized on the PCB on either side of
the quartz. A higher Cload will decrease oscillation
margin, but increases current oscillating through the
crystal.
Equivalent series resistance of the crystal. Choosing
a crystal with a higher value will decrease the
oscillating margin.
Comments
Electrical Characteristics
37

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