IS62C1024AL-35TLI ISSI, Integrated Silicon Solution Inc, IS62C1024AL-35TLI Datasheet - Page 8

• Manufacturer Part Number: IS62C1024AL-35TLI
• Description: IC SRAM 1MBIT 35NS 32TSOP
• Manufacturer: ISSI, Integrated Silicon Solution Inc
• Type: Asynchronousr

Specifications of IS62C1024AL-35TLI

• Memory Size: 1M (128K x 8)
• Package / Case: 32-TSOP
• Interface: Parallel
• Format - Memory: RAM
• Memory Type: SRAM - Asynchronous
• Speed: 35ns
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C
• Access Time: 35 ns
• Supply Voltage (max): 5.5 V
• Supply Voltage (min): 4.5 V
• Maximum Operating Current: 30 mA
• Organization: 128 K x 8
• Maximum Operating Temperature: + 85 C
• Minimum Operating Temperature: - 40 C
• Mounting Style: SMD/SMT
• Number Of Ports: 1
• Operating Supply Voltage: 5 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 706-1042

IS62C1024AL
IS65C1024AL
DATA RETENTION WAVEFORM (CE1 Controlled)
8
DATA RETENTION SWITCHING CHARACTERISTICS
V
I
Note:
1. Typical Values are measured at V
DATA RETENTION WAVEFORM (CE2 Controlled)
Symbol Parameter
t
t
Dr
sDr
rDr
Dr
4.5V
2.2V
4.5V
2.2V
GND
GND
V
Data Retention Current
Data Retention Setup Time See Data Retention Waveform
Recovery Time
DD
VDD
CE2
V
0.4V
VDD
V
CE1
for Data Retention
DR
DR
DD
= 5V, T
t
SDR
Test Condition
See Data Retention Waveform
V
or CE2 ≤ 0.2V
V
See Data Retention Waveform
a
In
DD
= 25
≥ V
= 2.0V, CE1 ≥ V
DD
o
C and not 100% tested.
– 0.2V, or V
Integrated Silicon Solution, Inc. — www.issi.com —
t
SDR
Data Retention Mode
In
CE1 ≥ VDD - 0.2V
Data Retention Mode
DD
≤ V
CE2 ≤ 0.2V
– 0.2V
ss
+ 0.2V
Com.
Auto.
Ind.
t
RDR
Min.
2.0
t
—
—
—
rc
0
t
RDR
Typ.
—
—
—
1-800-379-4774
Max.
5.5
10
45
—
—
5
06/26/08
Unit
µA
Rev. H
ns
ns
V