IS61WV25616BLL-10TLI ISSI, Integrated Silicon Solution Inc, IS61WV25616BLL-10TLI Datasheet
IS61WV25616BLL-10TLI
Specifications of IS61WV25616BLL-10TLI
IS61WV25616BLL-10TLI
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IS61WV25616BLL-10TLI Summary of contents
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... IS61WV25616ALL/ALS IS61WV25616BLL/BLS IS64WV25616BLL/BLS 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM FEATURES HIGH SPEED: (IS61/64WV25616ALL/BLL) • High-speed access time • Low Active Power (typical) • Low Standby Power (typical) CMOS standby LOW POWER: (IS61/64WV25616ALS/BLS) • High-speed access time: 25, 35 • Low Active Power (typical) • ...
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... IS61WV25616ALL/ALS, IS61WV25616BLL/BLS, IS64WV25616BLL/BLS TRUTH TABLE Mode Not Selected X H Output Disabled Read Write PIN CONFIGURATIONS 44-Pin TSOP (Type II) and SOJ I/O0 7 I/O1 8 I/O2 9 I/O3 10 VDD 11 GND 12 I/O4 13 I/O5 14 I/ *SOJ package under evaluation I/O0-I/ High High High OUT High OUT ...
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... IS61WV25616ALL/ALS, IS61WV25616BLL/BLS, IS64WV25616BLL/BLS PIN CONFIGURATIONS 44-Pin LQFP I/O0 3 I/O1 4 I/O2 5 I/O3 TOP VIEW 6 VDD 7 GND 8 I/O4 9 I/O5 10 I/ *LQFP package under evaluation. PIN DESCRIPTIONS A0-A17 Address Inputs I/O0-I/O15 Data Inputs/Outputs CE Chip Enable Input OE Output Enable Input WE Write Enable Input LB Lower-byte Control (I/O0-I/O7) ...
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... IS61WV25616ALL/ALS, IS61WV25616BLL/BLS, IS64WV25616BLL/BLS DC ELECTRICAL CHARACTERISTICS Symbol Parameter V Output HIGH Voltage OH V Output LOW Voltage OL V Input HIGH Voltage IH (1) V Input LOW Voltage IL I Input Leakage LI I Output Leakage LO Note (min.) = –0.3V DC; V (min.) = –2.0V AC (pulse width < 10 ns). Not 100% tested. ...
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... IS61WV25616ALL/ALS, IS61WV25616BLL/BLS, IS64WV25616BLL/BLS AC TEST CONDITIONS Parameter (2.4V-3.6V) Input Pulse Level Input Rise and Fall Times Input and Output Timing and Reference Level (V ) Ref Output Load See Figures 1 and 2 AC TEST LOADS Z = 50Ω O OUTPUT Figure 1. Integrated Silicon Solution, Inc. — www.issi.com Rev ...
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... IS61WV25616ALL/ALS, IS61WV25616BLL/BLS, IS64WV25616BLL/BLS ABSOLUTE MAXIMUM RATINGS Symbol Parameter V Terminal Voltage with Respect to GND TERM V V Relates to GND Storage Temperature STG P Power Dissipation T Notes: 1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied ...
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... Range Ambient Temperature Commercial 0°C to +70°C Industrial –40°C to +85°C Automotive –40°C to +125°C OPERATING RANGE (V ) (IS61WV25616BLL) DD Range Ambient Temperature Commercial 0°C to +70°C Industrial –40°C to +85°C Note: 1. When operated in the range of 2.4V-3.6V, the device meets 10ns. When operated in the range of 3 ...
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... IS61WV25616ALL/ALS, IS61WV25616BLL/BLS, IS64WV25616BLL/BLS LOW POWER (IS61WV25616ALS/BLS) OPERATING RANGE (V ) (IS61WV25616ALS) DD Range Ambient Temperature Commercial 0°C to +70°C Industrial –40°C to +85°C Automotive –40°C to +125°C OPERATING RANGE (V ) (IS61WV25616BLS) DD Range Ambient Temperature Commercial 0°C to +70°C Industrial –40°C to +85°C ...
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... IS61WV25616ALL/ALS, IS61WV25616BLL/BLS, IS64WV25616BLL/BLS READ CYCLE SWITCHING CHARACTERISTICS Symbol Parameter t Read Cycle Time RC t Address Access Time AA t Output Hold Time OHA CE Access Time t ACE OE Access Time t DOE OE to High-Z Output t (2) HZOE OE to Low-Z Output t (2) LZOE CE to High-Z Output t (2 HZCE ...
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... IS61WV25616ALL/ALS, IS61WV25616BLL/BLS, IS64WV25616BLL/BLS READ CYCLE SWITCHING CHARACTERISTICS Symbol Parameter t Read Cycle Time RC t Address Access Time AA t Output Hold Time OHA CE Access Time t ACE OE Access Time t DOE OE to High-Z Output t (2) HZOE OE to Low-Z Output t (2) LZOE CE to High-Z Output t (2 HZCE ...
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... IS61WV25616ALL/ALS, IS61WV25616BLL/BLS, IS64WV25616BLL/BLS AC WAVEFORMS (Address Controlled) ( READ CYCLE NO. 1 (1,2) ADDRESS D OUT PREVIOUS DATA VALID (1,3) READ CYCLE NO. 2 ADDRESS LZCE LB LZB HIGH-Z D OUT V DD Supply Current Notes HIGH for a Read Cycle. 2. The device is continuously selected. OE, CE, UB Address is valid prior to or coincident with CE LOW transition. ...
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... IS61WV25616ALL/ALS, IS61WV25616BLL/BLS, IS64WV25616BLL/BLS WRITE CYCLE SWITCHING CHARACTERISTICS Symbol Parameter t Write Cycle Time Write End t SCE t Address Setup Time AW to Write End t Address Hold from Write End HA t Address Setup Time SA LB, UB Valid to End of Write t PWB WE Pulse Width t 1 PWE WE Pulse Width (OE = LOW) ...
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... IS61WV25616ALL/ALS, IS61WV25616BLL/BLS, IS64WV25616BLL/BLS WRITE CYCLE SWITCHING CHARACTERISTICS Symbol Parameter t Write Cycle Time Write End t SCE t Address Setup Time AW to Write End t Address Hold from Write End HA t Address Setup Time SA LB, UB Valid to End of Write t PWB WE Pulse Width (OE = HIGH PWE WE Pulse Width (OE = LOW) ...
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... IS61WV25616ALL/ALS, IS61WV25616BLL/BLS, IS64WV25616BLL/BLS AC WAVEFORMS (CE Controlled HIGH or LOW) WRITE CYCLE NO. 1 ADDRESS UB DATA UNDEFINED OUT D IN Notes: 1. WRITE is an internally generated signal asserted during an overlap of the LOW states on the CE and WE inputs and at least one of the LB and UB inputs being in the LOW state WRITE = (CE) (LB) = (UB) (WE) ...
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... IS61WV25616ALL/ALS, IS61WV25616BLL/BLS, IS64WV25616BLL/BLS AC WAVEFORMS WRITE CYCLE NO. 3 (WE Controlled LOW During Write Cycle) ADDRESS OE LOW CE LOW UB DATA UNDEFINED OUT D IN (LB, UB Controlled, Back-to-Back Write) WRITE CYCLE NO. 4 ADDRESS OE CE LOW WE UB HZWE D OUT DATA UNDEFINED D IN Notes: 1. The internal Write time is defined by the overlap LOW, UB and/ LOW, and WE = LOW. All signals must be in valid states to initiate a Write, but any can be deasserted to terminate the Write ...
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... IS61WV25616ALL/ALS, IS61WV25616BLL/BLS, IS64WV25616BLL/BLS HIGH SPEED (IS61WV25616ALL/BLL) DATA RETENTION SWITCHING CHARACTERISTICS Symbol Parameter V V for Data Retention Data Retention Current DR t Data Retention Setup Time SDR t Recovery Time RDR Note 1: Typical values are measured 3.0V DATA RETENTION SWITCHING CHARACTERISTICS Symbol Parameter V V for Data Retention ...
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... IS61WV25616ALL/ALS, IS61WV25616BLL/BLS, IS64WV25616BLL/BLS LOW POWER (IS61WV25616ALS/BLS) DATA RETENTION SWITCHING CHARACTERISTICS Symbol Parameter V V for Data Retention Data Retention Current DR t Data Retention Setup Time SDR t Recovery Time RDR Note 1: Typical values are measured 3.0V DATA RETENTION SWITCHING CHARACTERISTICS Symbol Parameter V V for Data Retention ...
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... Speed = 10ns for V DD Industrial Range: -40°C to +85°C Voltage Range: 2.4V to 3.6V Speed (ns) Order Part No IS61WV25616BLL-10BI IS61WV25616BLL-10BLI IS61WV25616BLL-10TI IS61WV25616BLL-10TLI Note: 1. Speed = 8ns for V = 3.3V + 5%. Speed = 10ns for V DD Industrial Range: -40°C to +85°C Voltage Range: 1.65V to 2.2V Speed (ns) Order Part No. 20 IS61WV25616ALL-20BI IS61WV25616ALL-20TI IS61WV25616ALL-20TLI Automotive Range: -40° ...
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... IS61WV25616ALL/ALS, IS61WV25616BLL/BLS, IS64WV25616BLL/BLS ORDERING INFORMATION (LOW POWER) Industrial Range: -40°C to +85°C Voltage Range: 2.4V to 3.6V Speed (ns) Order Part No. 25 IS61WV25616BLS-25TLI Industrial Range: -40°C to +85°C Voltage Range: 1.65V to 2.2V Speed (ns) Order Part No. 45 IS61WV25616ALS-45TLI Integrated Silicon Solution, Inc. — www.issi.com Rev ...
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... IS61WV25616ALL/ALS, IS61WV25616BLL/BLS, IS64WV25616BLL/BLS 20 Integrated Silicon Solution, Inc. — www.issi.com Rev. G 07/15/2010 ...
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... IS61WV25616ALL/ALS, IS61WV25616BLL/BLS, IS64WV25616BLL/BLS Integrated Silicon Solution, Inc. — www.issi.com Rev. G 07/15/2010 ...