IS61WV25616BLL-10TLI ISSI, Integrated Silicon Solution Inc, IS61WV25616BLL-10TLI Datasheet - Page 4

IC SRAM 4MBIT 10NS 44TSOP

IS61WV25616BLL-10TLI

Manufacturer Part Number
IS61WV25616BLL-10TLI
Description
IC SRAM 4MBIT 10NS 44TSOP
Manufacturer
ISSI, Integrated Silicon Solution Inc
Datasheet

Specifications of IS61WV25616BLL-10TLI

Format - Memory
RAM
Memory Type
SRAM - Asynchronous
Memory Size
4M (256K x 16)
Speed
10ns
Interface
Parallel
Voltage - Supply
2.4 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
44-TSOP II
Density
4Mb
Access Time (max)
10ns
Sync/async
Asynchronous
Architecture
Not Required
Clock Freq (max)
Not RequiredMHz
Operating Supply Voltage (typ)
2.5/3.3V
Address Bus
18b
Package Type
TSOP-II
Operating Temp Range
-40C to 85C
Number Of Ports
1
Supply Current
40mA
Operating Supply Voltage (min)
2.4V
Operating Supply Voltage (max)
3.6V
Operating Temperature Classification
Industrial
Mounting
Surface Mount
Pin Count
44
Word Size
16b
Number Of Words
256K
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
706-1106
IS61WV25616BLL-10TLI

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IS61WV25616ALL/ALS, IS61WV25616BLL/BLS,
IS64WV25616BLL/BLS
DC ELECTRICAL CHARACTERISTICS
V
DC ELECTRICAL CHARACTERISTICS
V
DC ELECTRICAL CHARACTERISTICS
V
4
DD
DD
DD
Symbol
V
V
V
V
I
I
Note:
1. V
Symbol
V
V
V
V
I
I
Note:
1. V
Symbol
V
V
V
V
I
I
Note:
1. V
LI
LO
LI
LO
LI
LO
OH
OL
IH
IL
OH
OL
IH
IL
OH
OL
IH
IL (1)
= 3.3V + 5%
= 2.4V-3.6V
= 1.65V-2.2V
V
V
V
IL
IH
IH
IH
IL
IL
(min.) = –0.3V DC; V
(min.) = –0.3V DC; V
(min.) = –0.3V DC; V
(max.) = V
(max.) = V
(max.) = V
Parameter
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Leakage
Output Leakage
Parameter
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Leakage
Output Leakage
Parameter
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Leakage
Output Leakage
DD
DD
DD
+ 0.3V DC; V
+ 0.3V DC; V
+ 0.3V DC; V
IL
IL
IL
(min.) = –2.0V AC (pulse width < 10 ns). Not 100% tested.
(min.) = –2.0V AC (pulse width < 10 ns). Not 100% tested.
(min.) = –2.0V AC (pulse width < 10 ns). Not 100% tested.
(1)
(1)
IH
IH
IH
(max.) = V
(max.) = V
(max.) = V
Test Conditions
I
I
GND ≤ V
GND ≤ V
OH
OL
Test Conditions
V
V
GND ≤ V
GND ≤ V
Test Conditions
V
V
GND ≤ V
GND ≤ V
DD
DD
= 0.1 mA
DD
= -0.1 mA
DD
DD
DD
DD
+ 2.0V AC (pulse width < 10 ns). Not 100% tested.
+ 2.0V AC (pulse width < 10 ns). Not 100% tested.
+ 2.0V AC (pulse width < 10 ns). Not 100% tested.
= Min., I
= Min., I
= Min., I
= Min., I
(Over Operating Range)
(Over Operating Range)
(Over Operating Range)
OUT
IN
IN
OUT
≤ V
OUT
IN
≤ V
≤ V
≤ V
OH
≤ V
OH
OL
OL
DD
≤ V
DD
DD
= 8.0 mA
= 1.0 mA
DD
= –4.0 mA
= –1.0 mA
DD
, Outputs Disabled
DD
, Outputs Disabled
, Outputs Disabled
1.65-2.2V
1.65-2.2V
1.65-2.2V
1.65-2.2V
Integrated Silicon Solution, Inc. — www.issi.com
V
DD
Min.
–0.2
1.4
1.4
–1
–1
Min.
Min.
–0.3
–0.3
2.4
1.8
2.0
–1
–1
–1
–1
2
V
DD
Max.
V
V
0.2
0.4
1
1
DD
DD
+ 0.2
Max.
Max.
0.4
0.8
0.4
0.8
1
1
1
1
+ 0.3
+ 0.3
07/15/2010
Unit
Unit
Unit
µA
µA
µA
µA
µA
µA
Rev. G
V
V
V
V
V
V
V
V
V
V
V
V

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