MT46V32M16BN-6:F TR Micron Technology Inc, MT46V32M16BN-6:F TR Datasheet - Page 20

• Manufacturer Part Number: MT46V32M16BN-6:F TR
• Description: IC DDR SDRAM 512MBIT 6NS 60FBGA
• Manufacturer: Micron Technology Inc
• Type: DDR SDRAMr

Specifications of MT46V32M16BN-6:F TR

• Format - Memory: RAM
• Memory Type: DDR SDRAM
• Memory Size: 512M (32Mx16)
• Speed: 6ns
• Interface: Parallel
• Voltage - Supply: 2.3 V ~ 2.7 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 60-FBGA
• Organization: 32Mx16
• Density: 512Mb
• Address Bus: 15b
• Access Time (max): 700ps
• Maximum Clock Rate: 333MHz
• Operating Supply Voltage (typ): 2.5V
• Package Type: FBGA
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 2.7V
• Operating Supply Voltage (min): 2.3V
• Supply Current: 195mA
• Pin Count: 60
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 557-1286-2; MT46V32M16BN-6:F TR

Figure 10:
PDF: 09005aef80a1d9d4/Source: 09005aef82a95a3a
DDR_x4x8x16_Core2.fm - 512Mb DDR: Rev. N; Core DDR Rev. B 2/09 EN
Transmitter
Input Voltage Waveform
Notes:
1. V
2. V
3. Numbers in diagram reflect nominal values utilizing circuit below for all devices other than
-5B.
OH
OL
(MAX) with test load is 0.373V.
(MIN) with test load is 1.927V.
25Ω
V
V
V
VssQ
OL
DD
OH
1.560V
1.400V
1.300V
1.275V
1.250V
1.225V
1.200V
1.100V
0.940V
V
V
IN
Q (2.3V MIN)
System noise margin (power/ground,
crosstalk, signal integrity attenuation)
(MIN) (1.670V
(MAX) (0.83V
(
TT
AC
between
and
25Ω
) - provides margin
V
termination)
IL
(
AC
V
)
2
OL
1
for SSTL_2
for SSTL_2 termination)
Reference
point
(MAX)
20
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Electrical Specifications – DC and AC
512Mb: x4, x8, x16 DDR SDRAM
Receiver
©2000 Micron Technology, Inc. All rights reserved.
V
V
V
V
V
V
V
V
IH
IH
REF
REF
REF
REF
IL
IL
(
(
(
(
DC
AC
AC
DC
+ AC noise
+ DC error
- DC error
- AC noise
)
)
)
)