MT46V32M16BN-6:F TR Micron Technology Inc, MT46V32M16BN-6:F TR Datasheet - Page 62

• Manufacturer Part Number: MT46V32M16BN-6:F TR
• Description: IC DDR SDRAM 512MBIT 6NS 60FBGA
• Manufacturer: Micron Technology Inc
• Type: DDR SDRAMr

Specifications of MT46V32M16BN-6:F TR

• Format - Memory: RAM
• Memory Type: DDR SDRAM
• Memory Size: 512M (32Mx16)
• Speed: 6ns
• Interface: Parallel
• Voltage - Supply: 2.3 V ~ 2.7 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 60-FBGA
• Organization: 32Mx16
• Density: 512Mb
• Address Bus: 15b
• Access Time (max): 700ps
• Maximum Clock Rate: 333MHz
• Operating Supply Voltage (typ): 2.5V
• Package Type: FBGA
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 2.7V
• Operating Supply Voltage (min): 2.3V
• Supply Current: 195mA
• Pin Count: 60
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 557-1286-2; MT46V32M16BN-6:F TR

Figure 27:
PDF: 09005aef80a1d9d4/Source: 09005aef82a95a3a
DDR_x4x8x16_Core2.fm - 512Mb DDR: Rev. N; Core DDR Rev. B 2/09 EN
Command
Command
Command
Address
Address
Address
READ Burst
DQS
DQS
DQS
CK#
CK#
CK#
DQ
DQ
DQ
CK
CK
CK
Notes:
Bank a,
Bank a,
Bank a,
READ
Col n
READ
READ
Col n
Col n
T0
T0
T0
1. DO n = data-out from column n.
2. BL = 4.
3. Three subsequent elements of data-out appear in the programmed order following DO n.
4. Shown with nominal
CL = 2
NOP
NOP
NOP
T1
T1
T1
CL = 2.5
CL = 3
t
AC,
NOP
NOP
NOP
T2
T2
T2
t
DQSCK, and
62
DO
n
T2n
T2n
DO
n
Micron Technology, Inc., reserves the right to change products or specifications without notice.
NOP
T3
NOP
T3
NOP
T3
t
DQSQ.
DO
n
T3n
T3n
T3n
Transitioning Data
512Mb: x4, x8, x16 DDR SDRAM
T4
T4
T4
NOP
NOP
NOP
T4n
©2000 Micron Technology, Inc. All rights reserved.
T5
T5
T5
NOP
NOP
NOP
Don’t Care
Operations