MT46H32M16LFBF-5:B TR Micron Technology Inc, MT46H32M16LFBF-5:B TR Datasheet - Page 11

IC DDR SDRAM 512MBIT 60VFBGA

MT46H32M16LFBF-5:B TR

Manufacturer Part Number
MT46H32M16LFBF-5:B TR
Description
IC DDR SDRAM 512MBIT 60VFBGA
Manufacturer
Micron Technology Inc
Type
DDR SDRAMr

Specifications of MT46H32M16LFBF-5:B TR

Format - Memory
RAM
Memory Type
Mobile DDR SDRAM
Memory Size
512M (32Mx16)
Speed
200MHz
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.95 V
Operating Temperature
0°C ~ 70°C
Package / Case
60-VFBGA
Organization
32Mx16
Density
512Mb
Address Bus
15b
Access Time (max)
6.5/5ns
Maximum Clock Rate
200MHz
Operating Supply Voltage (typ)
1.8V
Package Type
VFBGA
Operating Temp Range
0C to 70C
Operating Supply Voltage (max)
1.95V
Operating Supply Voltage (min)
1.7V
Supply Current
115mA
Pin Count
60
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
557-1382-2
Ball Assignments and Descriptions
Figure 4: 60-Ball VFBGA – 8mm x 9mm (Top View)
PDF: 09005aef82d5d305
512mb_ddr_mobile_sdram_t47m.pdf – Rev. I 12/09 EN
Note:
A
B
C
D
E
F
G
H
J
K
1. D9 is a test pin that must be tied to V
V
V
V
V
CKE
V
V
V
A9
A6
1
DDQ
DDQ
SSQ
SSQ
SS
SS
SS
DQ15
DQ13
DQ11
UDQS
UDM
DQ9
A11
CK
A7
A4
2
DQ14
DQ12
DQ10
V
DQ8
CK#
A12
NC
A8
A5
3
SSQ
11
4
512Mb: x16, x32 Mobile LPDDR SDRAM
5
Micron Technology, Inc. reserves the right to change products or specifications without notice.
SS
Ball Assignments and Descriptions
or V
6
SSQ
in normal operations.
A10/AP
V
WE#
DQ1
DQ3
DQ5
DQ7
CS#
NC
A2
DDQ
7
LDQS
CAS#
LDM
DQ0
DQ2
DQ4
DQ6
BA0
A0
A3
8
© 2004 Micron Technology, Inc. All rights reserved.
TEST
V
V
RAS#
V
V
V
BA1
V
A1
DDQ
DDQ
9
SSQ
DD
DD
DD
1

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