MT29F16G08DAAWP-ET:A TR Micron Technology Inc, MT29F16G08DAAWP-ET:A TR Datasheet - Page 57

• Manufacturer Part Number: MT29F16G08DAAWP-ET:A TR
• Description: IC FLASH 16GBIT 48TSOP
• Manufacturer: Micron Technology Inc

Specifications of MT29F16G08DAAWP-ET:A TR

• Format - Memory: FLASH
• Memory Type: FLASH - Nand
• Memory Size: 16G (2G x 8)
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-TSOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Speed: -
• Other names: 557-1413-2

WRITE PROTECT Operation
Figure 48:
Figure 49:
Figure 50:
PDF: 09005aef81b80e13/Source: 09005aef81b80eac
4gb_nand_m40a__2.fm - Rev. B 2/07 EN
ERASE Enable
ERASE Disable
PROGRAM Enable
It is possible to enable and disable PROGRAM and ERASE commands using the WP# pin.
Figures 48 through 51 illustrate the setup time (
PROGRAM or ERASE command is latched into the command register. After command
cycle 1 is latched, the WP# pin must not be toggled until the command is complete and
the device is ready (status register bit 5 is “1”).
WE#
WP#
WE#
WP#
WE#
WP#
R/B#
R/B#
R/B#
I/Ox
I/Ox
I/Ox
t WW
t WW
t WW
60h
60h
80h
57
4Gb, 8Gb, and 16Gb x8 NAND Flash Memory
D0h
D0h
10h
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t
WW) required from WP# toggling until a
Command Definitions
©2006 Micron Technology, Inc. All rights reserved.