IDT71V416S12PHG8 IDT, Integrated Device Technology Inc, IDT71V416S12PHG8 Datasheet - Page 7

• Manufacturer Part Number: IDT71V416S12PHG8
• Description: IC SRAM 4MBIT 12NS 44TSOP
• Manufacturer: IDT, Integrated Device Technology Inc

Specifications of IDT71V416S12PHG8

• Format - Memory: RAM
• Memory Type: SRAM
• Memory Size: 4M (256K x 16)
• Speed: 12ns
• Interface: Parallel
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 44-TSOP II
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 71V416S12PHG8; 800-1849-2

Timing Waveform of Write Cycle No. 2 (CS Controlled Timing)
Timing Waveform of Write Cycle No. 3
(BHE, BLE Controlled Timing)
NOTES:
1. A write occurs during the overlap of a LOW CS, LOW BHE or BLE, and a LOW WE.
2. During this period, I/O pins are in the output state, and input signals must not be applied.
3. If the CS LOW or BHE and BLE LOW transition occurs simultaneously with or after the WE LOW transition, the outputs remain in a high-impedance state.
IDT71V416S, IDT71V416L, 3.3V CMOS Static RAM
4 Meg (256K x 16-Bit)
DATA
ADDRESS
ADDRESS
DATA
BHE, BLE
BHE, BLE
DATA
DATA
OUT
WE
OUT
WE
CS
CS
IN
IN
t
AS
t
AS
(1,3)
t
t
AW
AW
t
CW
t
t
WP
WP
(2)
t
t
t
WC
BW
WC
6.42
7
t
CW
(2)
t
BW
DATA
t
t
DATA
DW
DW
IN
IN
Commercial and Industrial Temperature Ranges
VALID
VALID
t
t
DH
DH
t
t
WR
WR
(1,3)
3624 drw 09
3624 drw 10