CY7C1515AV18-200BZC Cypress Semiconductor Corp, CY7C1515AV18-200BZC Datasheet - Page 26
![no-image](/images/manufacturer_photos/0/1/179/cypress_semiconductor_corp_sml.jpg)
CY7C1515AV18-200BZC
Manufacturer Part Number
CY7C1515AV18-200BZC
Description
IC SRAM 72MBIT 200MHZ 165TFBGA
Manufacturer
Cypress Semiconductor Corp
Datasheet
1.CY7C1513AV18-167BZC.pdf
(31 pages)
Specifications of CY7C1515AV18-200BZC
Format - Memory
RAM
Memory Type
SRAM - Synchronous, QDR II
Memory Size
72M (2M x 36)
Speed
200MHz
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.9 V
Operating Temperature
0°C ~ 70°C
Package / Case
165-TFBGA
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
CY7C1515AV18-200BZC
Manufacturer:
Cypress Semiconductor Corp
Quantity:
10 000
Switching Waveforms
Notes
Document Number: 001-06985 Rev. *D
29. Q00 refers to output from address A0. Q01 refers to output from the next internal burst address following A0, that is, A0+1.
30. Outputs are disabled (High-Z) one clock cycle after a NOP.
31. In this example, if address A2 = A1, then data Q20 = D10, Q21 = D11, Q22 = D12, and Q23 = D13. Write data is forwarded immediately as read results. This note
applies to the whole diagram.
WPS
RPS
CQ
CQ
D
A
K
K
Q
C
C
NOP
t KHCH
1
t KH
t CQH
t KL
t
t SA
SC
A0
READ
2
t HC
t HA
t KHCH
t
t CQHCQH
CYC
t CYC
Figure 5. Read/Write/Deselect Sequence
A1
WRITE
3
t KHKH
t CLZ
t
KHKH
t
SD
t CQOH
D10
A2
Q00
READ
4
t CQOH
t HD
D11
Q01
t CO
t CCQO
t
t
DOH
SC
D12
t SD
A3
CY7C1513AV18, CY7C1515AV18
CY7C1511AV18, CY7C1526AV18
Q02
WRITE
5
t CCQO
t HC
DON’T CARE
[29, 30, 31]
D13
Q03
t CQDOH
t HD
D30
NOP
Q20
6
t
KH
D31
Q21
t CQD
t KL
D32
UNDEFINED
7
Q22
t CHZ
D33
Page 26 of 31
Q23
[+] Feedback
[+] Feedback