IDT70T3539MS133BC IDT, Integrated Device Technology Inc, IDT70T3539MS133BC Datasheet

IC SRAM 18MBIT 133MHZ 256BGA

IDT70T3539MS133BC

Manufacturer Part Number
IDT70T3539MS133BC
Description
IC SRAM 18MBIT 133MHZ 256BGA
Manufacturer
IDT, Integrated Device Technology Inc
Datasheet

Specifications of IDT70T3539MS133BC

Format - Memory
RAM
Memory Type
SRAM - Dual Port, Synchronous
Memory Size
18M (512K x 36)
Speed
133MHz
Interface
Parallel
Voltage - Supply
2.4 V ~ 2.6 V
Operating Temperature
0°C ~ 70°C
Package / Case
256-BGA
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
70T3539MS133BC
800-1381

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IDT70T3539MS133BC
Manufacturer:
IDT
Quantity:
1 410
Part Number:
IDT70T3539MS133BC
Manufacturer:
IDT, Integrated Device Technology Inc
Quantity:
10 000
Part Number:
IDT70T3539MS133BC8
Manufacturer:
IDT, Integrated Device Technology Inc
Quantity:
10 000
Part Number:
IDT70T3539MS133BCI
Manufacturer:
IDT, Integrated Device Technology Inc
Quantity:
10 000
Part Number:
IDT70T3539MS133BCI8
Manufacturer:
IDT, Integrated Device Technology Inc
Quantity:
10 000
Features:
Functional Block Diagram
©2009 Integrated Device Technology, Inc.
NOTE:
1. The sleep mode pin shuts off all dynamic inputs, except JTAG inputs, when asserted. All static inputs, i.e., PL/FTx and OPTx and
True Dual-Port memory cells which allow simultaneous
access of the same memory location
High-speed data access
– Commercial: 3.6ns (166MHz)/4.2ns (133MHz)(max.)
– Industrial: 4.2ns (133MHz) (max.)
Selectable Pipelined or Flow-Through output mode
Counter enable and repeat features
Dual chip enables allow for depth expansion without
additional logic
Interrupt and Collision Detection Flags
Full synchronous operation on both ports
– 6ns cycle time, 166MHz operation (12Gbps bandwidth)
– Fast 3.6ns clock to data out
– 1.5ns setup to clock and 0.5ns hold on all control, data, and
the sleep mode pins themselves (ZZx) are not affected during sleep mode.
FT/PIPE
FT/PIPE
address inputs @ 166MHz
CE
CE
R/W
OE
0L
1L
L
L
L
L
BE
BE
BE
BE
1L
3L
2L
0L
1/0
1/0
1
0
0a 1a
a
CLK
0b 1b
b
L
I/O
REPEAT
CNTEN
0L
ADS
- I/O
A
0c 1c
A
18L
0L
c
L
L
L
COL
35L
INT
0/1
L
L
0d 1d
d
1d 0d 1c 0c 1b 0b 1a 0a
a b c d
Counter/
Address
CE 0 L
CE1 L
Reg.
HIGH-SPEED 2.5V
512K x 36
SYNCHRONOUS
DUAL-PORT STATIC RAM
WITH 3.3V OR 2.5V INTERFACE
R/ W L
ZZ
L
(1)
Dout0-8_L
Dout9-17_L
Dout18-26_L
Dout27-35_L
Din_L
ADDR_L
B
W
0
L
INTERRUPT
DE TE CTION
B
W
1
L
512K x 36
MEMORY
COLLISION
ARRAY
CONTROL
LOGIC
B
W
2
L
1
B
W
3
L
LOGIC
ZZ
B
W
3
R
Dout18-26_R
Dout27-35_R
Dout9-17_R
B
W
2
R
Dout0-8_R
ADDR_R
B
W
1
R
B
W
0
R
Din_R
– Data input, address, byte enable and control registers
– Self-timed write allows fast cycle time
Separate byte controls for multiplexed bus and bus
matching compatibility
Dual Cycle Deselect (DCD) for Pipelined Output Mode
2.5V (±100mV) power supply for core
LVTTL compatible, selectable 3.3V (±150mV) or 2.5V
(±100mV) power supply for I/Os and control signals on
each port
Includes JTAG functionality
Industrial temperature range (-40°C to +85°C) is
available at 133MHz
Available in a 256-pin Ball Grid Array (BGA)
ZZ
R
(1)
R / W R
0a 1a
Counter/
Address
Reg.
CE 0 R
CE1 R
0b 1b
d c b a
0c 1c
0d 1d
1d 0d
d
0/1
COL
INT
I/O
1c 0c
REPEAT
ADS
CNTEN
R
R
c
0R
A
A
0R
18R
R
- I/O
R
R
1b 0b
35R
b
CLK
TDO
TDI
IDT70T3539M
R
JANUARY 2009
1a 0a
a
1/0
1/0
1
0
5678 drw 01
,
JTAG
BE
BE
BE
BE
3R
2R
1R
0R
FT/PIPE
DSC 5678/7
R/W
FT/PIPE
TMS
TRST
OE
TCK
CE
CE
R
R
0R
1R
R
R
,

Related parts for IDT70T3539MS133BC

IDT70T3539MS133BC Summary of contents

Page 1

... Features: True Dual-Port memory cells which allow simultaneous access of the same memory location High-speed data access – Commercial: 3.6ns (166MHz)/4.2ns (133MHz)(max.) – Industrial: 4.2ns (133MHz) (max.) Selectable Pipelined or Flow-Through output mode Counter enable and repeat features Dual chip enables allow for depth expansion without ...

Page 2

... Description: The IDT70T3539M is a high-speed 512K x 36 bit synchronous Dual- Port RAM. The memory array utilizes Dual-Port memory cells to allow simultaneous access of any address from both ports. Registers on control, data, and address inputs provide minimal setup and hold times. The timing latitude provided by this approach allows systems to be designed with very short cycle times ...

Page 3

IDT70T3539M High-Speed 2.5V 512K x 36 Dual-Port Synchronous Static RAM Pin Configuration (1,2,3,4) 10/07/ TDI NC A 17L I/O NC TDO A 18L 18L I/O I/O V ...

Page 4

IDT70T3539M High-Speed 2.5V 512K x 36 Dual-Port Synchronous Static RAM Pin Names Left Port Right Port Chip Enables (Input R/W R/W Read/Write Enable (Input Output Enable ...

Page 5

... Counter Set to last valid ADS load (n) I/O , BEn and OE and BEn , the rising edge of CLK, regardless of all other memory control signals including CE IL 6.42 5 Industrial and Commercial Temperature Ranges (1,2,3,4) Byte 1 Byte 0 I/O I/O MODE 18-26 9-17 0-8 High-Z High-Z Deselected–Power Down ...

Page 6

IDT70T3539M High-Speed 2.5V 512K x 36 Dual-Port Synchronous Static RAM Recommended Operating Temperature and Supply Voltage Commercial Industrial NOTES: 1. This is the parameter TA. This is the "instant on" case temperature. Recommended DC Operating Conditions with V Symbol NOTES: ...

Page 7

IDT70T3539M High-Speed 2.5V 512K x 36 Dual-Port Synchronous Static RAM Absolute Maximum Ratings Symbol Rating V V Terminal Voltage TERM with Respect to GND DD ( Terminal Voltage TERM DDQ (V ) with Respect to ...

Page 8

IDT70T3539M High-Speed 2.5V 512K x 36 Dual-Port Synchronous Static RAM DC Electrical Characteristics Over the Operating Temperature and Supply Voltage Range Symbol Parameter CE I Dynamic Operating DD L Current (Both Outputs Disabled, Ports Active MAX CE ...

Page 9

IDT70T3539M High-Speed 2.5V 512K x 36 Dual-Port Synchronous Static RAM AC Test Conditions (V Input Pulse Levels (Address & Controls) Input Pulse Levels (I/Os) Input Rise/Fall Times Input Timing Reference Levels Output Reference Levels Output Load DATA OUT ∆ tCD ...

Page 10

IDT70T3539M High-Speed 2.5V 512K x 36 Dual-Port Synchronous Static RAM AC Electrical Characteristics Over the Operating Temperature Range (Read and Write Cycle Timing) Symbol t Clock Cycle Time (Flow-Through) CYC1 (1) t Clock Cycle Time (Pipelined) CYC2 t Clock High ...

Page 11

IDT70T3539M High-Speed 2.5V 512K x 36 Dual-Port Synchronous Static RAM Timing Waveform of Read Cycle for Pipelined Operation (1,2) (FT/PIPE = CYC2 t CH2 CLK ...

Page 12

IDT70T3539M High-Speed 2.5V 512K x 36 Dual-Port Synchronous Static RAM Timing Waveform of a Multi-Device Pipelined Read t CYC2 t t CH2 CL2 CLK ADDRESS 0 (B1 0(B1) DATA OUT(B1) ...

Page 13

IDT70T3539M High-Speed 2.5V 512K x 36 Dual-Port Synchronous Static RAM Timing Waveform of Left Port Write to Pipelined Right Port Read CLK "A" R/W "A " ADDRESS "A" MATCH ...

Page 14

... CNTEN, and REPEAT = Addresses do not have to be accessed sequentially since ADS = V are for reference use only. 4. "NOP" is "No Operation." Data in memory at the selected address may be corrupted and should be re-written to guarantee data integrity. Timing Waveform of Pipelined Read-to-Write-to-Read ( OE Controlled) t CYC2 t t CH2 CLK ...

Page 15

... Output state (High, Low, or High-impedance) is determined by the previous cycle control signals BEn, and ADS = V , CNTEN, and REPEAT = Addresses do not have to be accessed sequentially since ADS = V reference use only. 4. "NOP" is "No Operation." Data in memory at the selected address may be corrupted and should be re-written to guarantee data integrity ...

Page 16

IDT70T3539M High-Speed 2.5V 512K x 36 Dual-Port Synchronous Static RAM Timing Waveform of Pipelined Read with Address Counter Advance t CYC2 t t CH2 CLK ADDRESS t t SAD HAD ADS CNTEN ( ...

Page 17

IDT70T3539M High-Speed 2.5V 512K x 36 Dual-Port Synchronous Static RAM Timing Waveform of Write with Address Counter Advance (Flow-through or Pipelined Inputs) t CYC2 t CH2 CLK ADDRESS (3) INTERNAL An ADDRESS t t SAD ...

Page 18

IDT70T3539M High-Speed 2.5V 512K x 36 Dual-Port Synchronous Static RAM Waveform of Interrupt Timing CLK R ADDRESS (3) L 7FFFF ( INS INT ...

Page 19

IDT70T3539M High-Speed 2.5V 512K x 36 Dual-Port Synchronous Static RAM Waveform of Collision Timing CLK L t OFS ( ADDRESS L COL L CLK (4) ADDRESS ...

Page 20

IDT70T3539M High-Speed 2.5V 512K x 36 Dual-Port Synchronous Static RAM Timing Waveform - Entering Sleep Mode R/W Timing Waveform - Exiting Sleep Mode R/W OE DATA OUT (4) NOTES IH. 2. All timing is same ...

Page 21

... Both ports writing - there is a risk that the two ports will interfere with each other, and the data stored in memory will not be a valid write from either port (it may essentially be a random combination of the two) ...

Page 22

... IDT70T3539M Control Inputs JTAG Functionality and Configuration The IDT70T3539M is composed of two independent memory arrays, and thus cannot be treated as a single JTAG device in the scan chain. The two arrays (A and B) each have identical characteristics and commands but must be treated as separate entities in JTAG operations. ...

Page 23

IDT70T3539M High-Speed 2.5V 512K x 36 Dual-Port Synchronous Static RAM JTAG Timing Specifications t JF TCK (1) Device Inputs / TDI/TMS (2) Device Outputs / TDO TRST t JRST NOTES: 1. Device inputs = All device inputs except TDI, TMS, ...

Page 24

IDT70T3539M High-Speed 2.5V 512K x 36 Dual-Port Synchronous Static RAM Identification Register Definitions Value Instruction Field Array B Array B Revision Number (31:28) 0x0 IDT Device ID (27:12) 0x333 IDT JEDEC ID (11:1) 0x33 ID Register Indicator Bit (Bit 0) ...

Page 25

IDT70T3539M High-Speed 2.5V 512K x 36 Dual-Port Synchronous Static RAM Ordering Information XXXXX A 999 A Device Power Speed Package Type Temperature IDT Clock Solution for IDT70T3539M Dual-Port Dual-Port I/O Specitications IDT Dual-Port Part Number Voltage I/O 70T3539M 3.3/2.5 LVTTL ...

Page 26

IDT70T3539M High-Speed 2.5V 512K x 36 Dual-Port Synchronous Static RAM Datasheet Document History: 10/08/03: Initial Datasheet 10/20/03: Page 1 Added "Includes JTAG functionality" to features Page 25 Added IDT Clock Solution Table 12/04/03: Page 10 Added t symbol and parameter ...

Related keywords