W9864G6JH-6 Winbond Electronics, W9864G6JH-6 Datasheet - Page 36

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W9864G6JH-6

Manufacturer Part Number
W9864G6JH-6
Description
IC SDRAM 64MB 166MHZ 54TSOPII
Manufacturer
Winbond Electronics
Datasheet

Specifications of W9864G6JH-6

Format - Memory
RAM
Memory Type
SDRAM
Memory Size
64M (4M x 16)
Speed
166MHz
Interface
Parallel
Voltage - Supply
3 V ~ 3.3 V
Operating Temperature
0°C ~ 70°C
Package / Case
54-TSOP II
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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11.15 Auto-precharge Timing (Write Cycle)
(1) CAS Latency = 2
(2) CAS Latency = 3
(a) burst length = 1
(b) burst length = 2
(c) burst length = 4
(d) burst length = 8
(a) burst length = 1
(b) burst length = 2
(c) burst length = 4
(d) burst length = 8
Command
Command
Command
Command
Command
Command
Command
Command
CLK
DQ
DQ
DQ
DQ
DQ
DQ
Note )
DQ
DQ
Write
Write
Write
Write
Write
Write
Write
Write
D0
D0
D0
D0
D0
D0
D0
D0
0
When the /auto precharge command is asserted,the period from Bank Activate
command to the start of intermal precgarging must be at least tRAS (min).
Write
AP
Act
Act
D1
D1
D1
D1
tWR
D1
D1
1
tWR
AP
AP
D2
D2
represents the Write with Auto precharge command.
represents the start of internal precharing.
represents the Bank Active command.
D2
D2
tWR
tWR
2
AP
tRP
AP
D3
D3
D3
D3
3
tRP
Act
tRP
D4
D4
tWR
tWR
4
- 36 -
tRP
Act
Act
AP
D5
AP
D5
5
D6
Act
tRP
D6
6
tRP
Act
D7
D7
Publication Release Date: Aug. 31, 2010
7
Act
tWR
8
tWR
AP
AP
9
W9864G6JH
10
tRP
tRP
Act
11
Revision A02
Act
Act
12

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